Low

MMBT3906WT1G - 

Bipolar (BJT) Single Transistor, General Purpose, PNP, 40 V, 250 MHz, 150 mW, 200 mA, 250 hFE

ON SEMICONDUCTOR MMBT3906WT1G

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Manufacturer Part No:
MMBT3906WT1G
Newark Part No.:
88H4789
Product Range
MMBTxxxx Series
Technical Datasheet:
(EN)
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Product Overview

The MMBT3906WT1G is a PNP Bipolar Transistor designed for general purpose amplifier applications. It is housed in the package which is designed for low power surface-mount applications.
  • Low RDS (ON) provides higher efficiency and extends battery life
  • Saves board space
  • AEC-Q101 qualified and PPAP capable

Applications

Industrial, Power Management, Automotive

Product Information

:
PNP
:
40V
:
250MHz
:
150mW
:
200mA
:
250hFE
:
SOT-323
:
3Pins
:
150°C
:
MMBTxxxx Series
:
-
:
MSL 1 - Unlimited
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ON SEMICONDUCTOR

Bipolar (BJT) Single Transistor, General Purpose, PNP, 40 V, 250 MHz, 150 mW, 200 mA, 250

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