Low

ON SEMICONDUCTOR  MMBT3906WT1G  Bipolar (BJT) Single Transistor, General Purpose, PNP, 40 V, 250 MHz, 150 mW, 200 mA, 250 hFE

ON SEMICONDUCTOR MMBT3906WT1G
Technical Data Sheet (128.53KB) EN See all Technical Docs

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Product Overview

The MMBT3906WT1G is a PNP Bipolar Transistor designed for general purpose amplifier applications. It is housed in the package which is designed for low power surface-mount applications.
  • Low RDS (ON) provides higher efficiency and extends battery life
  • Saves board space
  • AEC-Q101 qualified and PPAP capable

 

Product Information

Transistor Polarity:
PNP
Collector Emitter Voltage V(br)ceo:
40V
Transition Frequency ft:
250MHz
Power Dissipation Pd:
150mW
DC Collector Current:
200mA
DC Current Gain hFE:
250hFE
Transistor Case Style:
SOT-323
No. of Pins:
3Pins
Operating Temperature Max:
150°C
Product Range:
MMBTxxxx Series
Automotive Qualifications Standard:
-
MSL:
MSL 1 - Unlimited
Operating Temperature Min:
-55 °C
SVHC:
No SVHC (17-Dec-2015)

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Applications

  • Industrial;
  • Power Management;
  • Automotive

Legislation and Environmental

Moisture Sensitivity Level:
MSL 1 - Unlimited
Product Traceability
RoHS Compliant:
Yes
Authorized Distributor

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