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ON SEMICONDUCTOR  MMBT3906LT1G  Bipolar (BJT) Single Transistor, General Purpose, PNP, -40 V, 250 MHz, 300 mW, -200 mA, 300 hFE

ON SEMICONDUCTOR MMBT3906LT1G
Technical Data Sheet (125.90KB) EN See all Technical Docs

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Product Overview

The MMBT3906LT1G is a PNP silicon Bipolar Transistor, designed for use in linear and switching applications.
  • Halogen-free/BFR-free
  • AEC-Q101 Qualified and PPAP Capable

 

Product Information

Transistor Polarity:
PNP
Collector Emitter Voltage V(br)ceo:
-40V
Transition Frequency ft:
250MHz
Power Dissipation Pd:
300mW
DC Collector Current:
-200mA
DC Current Gain hFE:
300hFE
Transistor Case Style:
SOT-23
No. of Pins:
3Pins
Operating Temperature Max:
150°C
Product Range:
MMBTxxxx Series
Automotive Qualifications Standard:
-
MSL:
MSL 1 - Unlimited
Operating Temperature Min:
-55 °C
SVHC:
No SVHC (17-Dec-2015)

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Applications

  • Signal Processing;
  • Industrial

Legislation and Environmental

Moisture Sensitivity Level:
MSL 1 - Unlimited
Product Traceability
RoHS Compliant:
Yes
Authorized Distributor

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