Low

ON SEMICONDUCTOR  MMBT3904WT1G  Bipolar (BJT) Single Transistor, General Purpose, NPN, 40 V, 300 MHz, 150 mW, 200 mA, 300 hFE

ON SEMICONDUCTOR MMBT3904WT1G
Technical Data Sheet (128.53KB) EN See all Technical Docs

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Product Overview

The MMBT3904WT1G is a NPN Bipolar Transistor designed for general purpose amplifier applications. It is housed in the package which is designed for low power surface-mount applications.
  • Low RDS (ON) provides higher efficiency and extends battery life
  • AEC-Q101 qualified and PPAP capable

 

Product Information

Transistor Polarity:
NPN
Collector Emitter Voltage V(br)ceo:
40V
Transition Frequency ft:
300MHz
Power Dissipation Pd:
150mW
DC Collector Current:
200mA
DC Current Gain hFE:
300hFE
Transistor Case Style:
SOT-323
No. of Pins:
3Pins
Operating Temperature Max:
150°C
Product Range:
MMBTxxxx Series
Automotive Qualifications Standard:
-
MSL:
MSL 1 - Unlimited
Operating Temperature Min:
-55 °C
SVHC:
No SVHC (17-Dec-2015)

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Applications

  • Industrial;
  • Power Management;
  • Automotive

Legislation and Environmental

Moisture Sensitivity Level:
MSL 1 - Unlimited
Product Traceability
RoHS Compliant:
Yes
Authorized Distributor

Substitutes

Bipolar (BJT) Single Transistor, NPN, 40 V, 300 MHz, 150 mW, 200 mA, 300 hFE

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Price for: Each (Supplied on Full Reel)

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Bipolar (BJT) Single Transistor, General Purpose, NPN, 40 V, 300 MHz, 150 mW, 200 mA, 300

ON SEMICONDUCTOR

6,808:  in stock

Price for: Each (Supplied on Cut Tape)

1+ $0.177 50+ $0.148 100+ $0.053 250+ $0.051 More pricing

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