Low

ON SEMICONDUCTOR  MMBT3904WT1G  Bipolar (BJT) Single Transistor, General Purpose, NPN, 40 V, 300 MHz, 150 mW, 200 mA, 300 hFE

ON SEMICONDUCTOR MMBT3904WT1G
Manufacturer Part No:
MMBT3904WT1G
Newark Part No.:
88H4788
Product Range
MMBTxxxx Series
Technical Datasheet:
See all Technical Docs

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Product Overview

The MMBT3904WT1G is a NPN Bipolar Transistor designed for general purpose amplifier applications. It is housed in the package which is designed for low power surface-mount applications.
  • Low RDS (ON) provides higher efficiency and extends battery life
  • AEC-Q101 qualified and PPAP capable

Product Information

Transistor Polarity:
NPN
Collector Emitter Voltage V(br)ceo:
40V
Transition Frequency ft:
300MHz
Power Dissipation Pd:
150mW
DC Collector Current:
200mA
DC Current Gain hFE:
300hFE
Transistor Case Style:
SOT-323
No. of Pins:
3Pins
Operating Temperature Max:
150°C
Product Range:
MMBTxxxx Series
Automotive Qualifications Standard:
-
MSL:
MSL 1 - Unlimited
SVHC:
No SVHC (12-Jan-2017)

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Applications

  • Industrial
  • Power Management
  • Automotive

Legislation and Environmental

RoHS Compliant:
Yes
Authorized Distributor

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Bipolar (BJT) Single Transistor, NPN, 40 V, 300 MHz, 150 mW, 200 mA, 300 hFE

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Bipolar (BJT) Single Transistor, General Purpose, NPN, 40 V, 300 MHz, 150 mW, 200 mA, 300

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