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ON SEMICONDUCTOR  MMBT3904LT3G  Bipolar (BJT) Single Transistor, General Purpose, NPN, 40 V, 300 MHz, 300 mW, 200 mA, 300 hFE

ON SEMICONDUCTOR MMBT3904LT3G
Manufacturer Part No:
MMBT3904LT3G
Newark Part No.:
98H0751
Product Range
MMBTxxxx Series
Technical Datasheet:
See all Technical Docs

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Product Overview

The MMBT3904LT3G is a 40V NPN silicon Bipolar Transistor designed for use in linear and switching applications. The device is suitable for lower power surface mount applications.
  • Halogen-free/BFR-free
  • 60VDC Collector to base voltage (VCBO)
  • 6VDC Emitter to base voltage (VEBO)
  • 900mADC Peak collector current
  • 556°C/W Thermal resistance, junction to ambient

Product Information

Transistor Polarity:
NPN
Collector Emitter Voltage V(br)ceo:
40V
Transition Frequency ft:
300MHz
Power Dissipation Pd:
300mW
DC Collector Current:
200mA
DC Current Gain hFE:
300hFE
Transistor Case Style:
SOT-23
No. of Pins:
3Pins
Operating Temperature Max:
150°C
Product Range:
MMBTxxxx Series
Automotive Qualifications Standard:
AEC-Q100
MSL:
MSL 1 - Unlimited
SVHC:
No SVHC (12-Jan-2017)

Find similar products  grouped by common attribute

Applications

  • Industrial
  • Power Management

Legislation and Environmental

Product Traceability
RoHS Compliant:
Yes
Authorized Distributor

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