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MMBT3904LT3G - 

Bipolar (BJT) Single Transistor, General Purpose, NPN, 40 V, 300 MHz, 300 mW, 200 mA, 300 hFE

ON SEMICONDUCTOR MMBT3904LT3G

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Manufacturer Part No:
MMBT3904LT3G
Newark Part No.:
98H0751
Product Range
MMBTxxxx Series
Technical Datasheet:
(EN)
See all Technical Docs

Product Information

:
300mW
:
AEC-Q100
:
40V
:
300MHz
:
150°C
:
3Pins
:
NPN
:
300hFE
:
MMBTxxxx Series
:
200mA
:
SOT-23
:
MSL 1 - Unlimited
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Product Overview

The MMBT3904LT3G is a 40V NPN silicon Bipolar Transistor designed for use in linear and switching applications. The device is suitable for lower power surface mount applications.
  • Halogen-free/BFR-free
  • 60VDC Collector to base voltage (VCBO)
  • 6VDC Emitter to base voltage (VEBO)
  • 900mADC Peak collector current
  • 556°C/W Thermal resistance, junction to ambient

Applications

Industrial, Power Management

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