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ON SEMICONDUCTOR  MMBT3904LT1G  Bipolar (BJT) Single Transistor, General Purpose, NPN, 40 V, 300 MHz, 300 mW, 200 mA, 300 hFE

ON SEMICONDUCTOR MMBT3904LT1G
Technical Data Sheet (126.40KB) EN See all Technical Docs

Image is for illustrative purposes only. Please refer to product description.

Product Overview

The MMBT3904LT1G is a NPN silicon Bipolar Transistor, designed for use in linear, lower power surface mount and switching applications.
  • Halogen-free/BFR-free
  • AEC-Q101 Qualified and PPAP Capable

 

Product Information

Transistor Polarity:
NPN
Collector Emitter Voltage V(br)ceo:
40V
Transition Frequency ft:
300MHz
Power Dissipation Pd:
300mW
DC Collector Current:
200mA
DC Current Gain hFE:
300hFE
Transistor Case Style:
SOT-23
No. of Pins:
3Pins
Operating Temperature Max:
150°C
Product Range:
MMBTxxxx Series
Automotive Qualifications Standard:
-
MSL:
MSL 1 - Unlimited
Operating Temperature Min:
-55 °C
SVHC:
No SVHC (17-Dec-2015)

Find similar products  grouped by common attribute

Applications

  • Signal Processing;
  • Industrial;
  • Automotive

Legislation and Environmental

Moisture Sensitivity Level:
MSL 1 - Unlimited
Product Traceability
RoHS Compliant:
Yes
Authorized Distributor

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