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MMBT2222LT1G - 

Bipolar (BJT) Single Transistor, NPN, 30 V, 250 MHz, 300 mW, 600 mA, 250 hFE

ON SEMICONDUCTOR MMBT2222LT1G

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Manufacturer Part No:
MMBT2222LT1G
Newark Part No.:
67R1336
Technical Datasheet:
(EN)
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Product Information

:
300mW
:
-
:
30V
:
250MHz
:
150°C
:
3Pins
:
NPN
:
250hFE
:
-
:
600mA
:
SOT-23
:
MSL 1 - Unlimited
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Product Overview

The MMBT2222LT1G is a 30V NPN silicon Bipolar Transistor designed for use in linear and switching applications. The device is suitable for lower power surface mount applications.
  • Halogen-free/BFR-free
  • AEC-Q101 qualified and PPAP capable
  • 60VDC Collector to base voltage (VCBO)
  • 5VDC Emitter to base voltage (VEBO)
  • 1100mA DC Peak collector current
  • 556°C/W Thermal resistance, junction to ambient

Applications

Industrial, Power Management

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ON SEMICONDUCTOR

Bipolar (BJT) Single Transistor, General Purpose, NPN, 30 V, 250 MHz, 300 mW, 600 mA, 250 hFE

5,000 in stock
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