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ON SEMICONDUCTOR  MMBT2222ALT1G  Bipolar (BJT) Single Transistor, General Purpose, NPN, 40 V, 300 MHz, 225 mW, 600 mA, 300 hFE

ON SEMICONDUCTOR MMBT2222ALT1G
Technical Data Sheet (128.25KB) EN See all Technical Docs

Image is for illustrative purposes only. Please refer to product description.

Product Overview

The MMBT2222ALT1G is a NPN silicon Bipolar Transistor, designed for use in linear, lower power surface mount and switching applications.
  • Halogen-free/BFR-free
  • AEC-Q101 Qualified and PPAP Capable

 

Product Information

Transistor Polarity:
NPN
Collector Emitter Voltage V(br)ceo:
40V
Transition Frequency ft:
300MHz
Power Dissipation Pd:
225mW
DC Collector Current:
600mA
DC Current Gain hFE:
300hFE
Transistor Case Style:
SOT-23
No. of Pins:
3Pins
Operating Temperature Max:
150°C
Product Range:
MMBTxxxx Series
MSL:
MSL 1 - Unlimited
Operating Temperature Min:
-55 °C
SVHC:
No SVHC (17-Dec-2015)

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Applications

  • Signal Processing;
  • Industrial;
  • Automotive

Legislation and Environmental

Moisture Sensitivity Level:
MSL 1 - Unlimited
Product Traceability
RoHS Compliant:
Yes

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