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MJH11022G - 

Bipolar (BJT) Single Transistor, NPN, 250 V, 3 MHz, 150 W, 15 A, 15 hFE

ON SEMICONDUCTOR MJH11022G

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Manufacturer Part No:
MJH11022G
Newark Part No.:
26K4486
Technical Datasheet:
(EN)
See all Technical Docs

Product Information

:
150W
:
-
:
250V
:
3MHz
:
150°C
:
3Pins
:
NPN
:
15hFE
:
-
:
15A
:
TO-247
:
-
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Product Overview

The MJH11022G is a 250V NPN Darlington Bipolar Power Transistor designed for use as general purpose amplifiers, low frequency switching and motor control applications. The MJH11021 (PNP) and MJH11022 (NPN) are complementary devices.
  • High DC current gain
  • 250VDC Minimum collector-emitter sustaining voltage (VCEO(sus))
  • Low collector-emitter saturation voltage (VCE (sat))
  • Monolithic construction
  • 250VDC Collector to base voltage (VCBO)
  • 5V Emitter to base voltage (VEBO)
  • 30ADC Peak collector current
  • 0.5A DC Base current (IB)
  • 0.83°C/W Thermal resistance, junction to case

Applications

Industrial, Motor Drive & Control

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