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ON SEMICONDUCTOR  MJH11022G  Bipolar (BJT) Single Transistor, NPN, 250 V, 3 MHz, 150 W, 15 A, 15 hFE

ON SEMICONDUCTOR MJH11022G
Technical Data Sheet (135.71KB) EN See all Technical Docs

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Product Overview

The MJH11022G is a 250V NPN Darlington Bipolar Power Transistor designed for use as general purpose amplifiers, low frequency switching and motor control applications. The MJH11021 (PNP) and MJH11022 (NPN) are complementary devices.
  • High DC current gain
  • 250VDC Minimum collector-emitter sustaining voltage (VCEO(sus))
  • Low collector-emitter saturation voltage (VCE (sat))
  • Monolithic construction
  • 250VDC Collector to base voltage (VCBO)
  • 5V Emitter to base voltage (VEBO)
  • 30ADC Peak collector current
  • 0.5A DC Base current (IB)
  • 0.83°C/W Thermal resistance, junction to case

 

Product Information

Transistor Polarity:
NPN
Collector Emitter Voltage V(br)ceo:
250V
Transition Frequency ft:
3MHz
Power Dissipation Pd:
150W
DC Collector Current:
15A
DC Current Gain hFE:
15hFE
Transistor Case Style:
TO-247
No. of Pins:
3Pins
Operating Temperature Max:
150°C
Product Range:
-
Automotive Qualifications Standard:
-
MSL:
-
Operating Temperature Min:
-65 °C
SVHC:
No SVHC (17-Dec-2015)

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Applications

  • Industrial;
  • Motor Drive & Control

Legislation and Environmental

Moisture Sensitivity Level:
-
Product Traceability
RoHS Compliant:
Yes
Authorized Distributor

Substitutes

Associated Products