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ON SEMICONDUCTOR  MJE700G  Bipolar (BJT) Single Transistor, Darlington, PNP, 60 V, 40 W, 4 A, 750 hFE

ON SEMICONDUCTOR MJE700G
Technical Data Sheet (134.41KB) EN See all Technical Docs

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Product Overview

The MJE700G is a 4A PNP bipolar power Darlington Transistor designed for general purpose amplifier and low speed switching applications.
  • Complementary device
  • Monolithic construction with built-in base-emitter resistors to limit leakage multiplication

 

Product Information

Transistor Polarity:
PNP
Collector Emitter Voltage V(br)ceo:
60V
Transition Frequency ft:
-
Power Dissipation Pd:
40W
DC Collector Current:
4A
DC Current Gain hFE:
750hFE
Transistor Case Style:
TO-225
No. of Pins:
3Pins
Operating Temperature Max:
150°C
Product Range:
-
Automotive Qualifications Standard:
-
MSL:
-
Operating Temperature Min:
-55 °C
SVHC:
No SVHC (17-Dec-2015)

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Applications

  • Industrial;
  • Power Management

Legislation and Environmental

Moisture Sensitivity Level:
-
Product Traceability
RoHS Compliant:
Yes
Authorized Distributor

Substitutes

Associated Products