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MJE5852G - 

Bipolar (BJT) Single Transistor, PNP, 400 V, 80 W, 8 A, 15 hFE

ON SEMICONDUCTOR MJE5852G

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Manufacturer Part No:
MJE5852G
Newark Part No.:
26K4469
Product Range
MJxxxx Series
Technical Datasheet:
(EN)
See all Technical Docs

Product Information

:
80W
:
-
:
400V
:
-
:
150°C
:
3Pins
:
PNP
:
15hFE
:
MJxxxx Series
:
8A
:
TO-220AB
:
-
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Product Overview

The MJE5852G is a -400V PNP silicon Bipolar Power Transistor designed for high voltage, high speed and power switching in inductive circuits where fall time is critical. This switch-mode series transistor is particularly suited for line operated switch-mode applications.
  • Fast turn-off times
  • Complementary to the MJE13007 series
  • 6V Emitter to base voltage (VEBO)
  • 16ADC Peak collector current
  • 4ADC Base current (IB)
  • 1.25°C/W Thermal resistance, junction to case

Applications

Industrial, Power Management

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