Low

ON SEMICONDUCTOR  MJE5852G  Bipolar (BJT) Single Transistor, PNP, 400 V, 80 W, 8 A, 15 hFE

ON SEMICONDUCTOR MJE5852G
Technical Data Sheet (98.39KB) EN See all Technical Docs

The actual product may differ from image shown

Product Overview

The MJE5852G is a -400V PNP silicon Bipolar Power Transistor designed for high voltage, high speed and power switching in inductive circuits where fall time is critical. This switch-mode series transistor is particularly suited for line operated switch-mode applications.
  • Fast turn-off times
  • Complementary to the MJE13007 series
  • 6V Emitter to base voltage (VEBO)
  • 16ADC Peak collector current
  • 4ADC Base current (IB)
  • 1.25°C/W Thermal resistance, junction to case

 

Product Information

Transistor Polarity:
PNP
Collector Emitter Voltage V(br)ceo:
400V
Transition Frequency ft:
-
Power Dissipation Pd:
80W
DC Collector Current:
8A
DC Current Gain hFE:
15hFE
Transistor Case Style:
TO-220AB
No. of Pins:
3Pins
Operating Temperature Max:
150°C
Product Range:
MJxxxx Series
Automotive Qualifications Standard:
-
MSL:
-
Operating Temperature Min:
-65 °C
SVHC:
No SVHC (17-Dec-2015)

Find similar products  grouped by common attribute

Applications

  • Industrial;
  • Power Management

Legislation and Environmental

Moisture Sensitivity Level:
-
RoHS Compliant:
Yes
Authorized Distributor

Associated Products