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ON SEMICONDUCTOR  MJE271G  Bipolar (BJT) Single Transistor, PNP, 100 V, 6 MHz, 1.5 W, 2 A, 1500 hFE

ON SEMICONDUCTOR MJE271G
Technical Data Sheet (84.05KB) EN See all Technical Docs

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Product Information

Transistor Polarity:
PNP
Collector Emitter Voltage V(br)ceo:
100V
Transition Frequency ft:
6MHz
Power Dissipation Pd:
1.5W
DC Collector Current:
2A
DC Current Gain hFE:
1500hFE
Transistor Case Style:
TO-225
No. of Pins:
3Pins
Operating Temperature Max:
150°C
Product Range:
-
Automotive Qualifications Standard:
-
MSL:
-
Operating Temperature Min:
-65 °C
SVHC:
To Be Advised

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Legislation and Environmental

Moisture Sensitivity Level:
-
RoHS Compliant:
Yes
Authorized Distributor

Substitutes

Bipolar (BJT) Single Transistor, Darlington, PNP, -100 V, 40 W, -4 A, 750 hFE

ON SEMICONDUCTOR

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