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ON SEMICONDUCTOR  MJE271G  Bipolar (BJT) Single Transistor, PNP, 100 V, 6 MHz, 1.5 W, 2 A, 1500 hFE

ON SEMICONDUCTOR MJE271G
Manufacturer Part No:
MJE271G
Newark Part No.:
26K4460
Technical Datasheet:
See all Technical Docs

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Product Information

Transistor Polarity:
PNP
Collector Emitter Voltage V(br)ceo:
100V
Transition Frequency ft:
6MHz
Power Dissipation Pd:
1.5W
DC Collector Current:
2A
DC Current Gain hFE:
1500hFE
Transistor Case Style:
TO-225
No. of Pins:
3Pins
Operating Temperature Max:
150°C
Product Range:
-
Automotive Qualifications Standard:
-
MSL:
-
SVHC:
To Be Advised

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Legislation and Environmental

RoHS Compliant:
Yes
Authorized Distributor

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Bipolar (BJT) Single Transistor, Darlington, PNP, -100 V, 40 W, -4 A, 750 hFE

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