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ON SEMICONDUCTOR  MJE210G  Bipolar (BJT) Single Transistor, PNP, 25 V, 65 MHz, 15 W, 5 A, 65 hFE

ON SEMICONDUCTOR MJE210G
Technical Data Sheet (164.49KB) EN See all Technical Docs

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Product Overview

The MJE210G is a PNP complementary silicon Power Transistor designed for low voltage, low-power and high-gain audio amplifier applications. The device offers high DC current gain and low collector to emitter saturation voltage.
  • High current-gain-bandwidth product
  • Annular construction for low leakage
  • 40VDC Collector-emitter voltage
  • 25VDC Collector-base voltage
  • 8VDC Emitter-base voltage
  • 5A Continuous collector current

 

Product Information

Transistor Polarity:
PNP
Collector Emitter Voltage V(br)ceo:
25V
Transition Frequency ft:
65MHz
Power Dissipation Pd:
15W
DC Collector Current:
5A
DC Current Gain hFE:
65hFE
Transistor Case Style:
TO-225
No. of Pins:
3Pins
Operating Temperature Max:
150°C
Product Range:
MJxxxx Series
Automotive Qualifications Standard:
-
MSL:
MSL 1 - Unlimited
Operating Temperature Min:
-65 °C
SVHC:
No SVHC (17-Dec-2015)
RF Transistor Case:
TO-225

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Applications

  • Industrial;
  • Audio;
  • Power Management

Legislation and Environmental

Moisture Sensitivity Level:
MSL 1 - Unlimited
Product Traceability
RoHS Compliant:
Yes
Authorized Distributor

Substitutes

TRANSISTOR, BIPOL, PNP, 40V, TO-225-3

ON SEMICONDUCTOR

198:  in stock

Price for: Each

1+ $0.575 250+ $0.434 500+ $0.387 1000+ $0.349 More pricing

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Bipolar (BJT) Single Transistor, PNP, -80 V, 2 MHz, 40 W, -4 A, 80 hFE

NTE ELECTRONICS

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Price for: Each

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