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MJD122G - 

Bipolar (BJT) Single Transistor, Darlington, NPN, 100 V, 1.75 W, 8 A, 12 hFE

ON SEMICONDUCTOR MJD122G

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Manufacturer Part No:
MJD122G
Newark Part No.:
42K1269
Technical Datasheet:
(EN)
See all Technical Docs

Product Information

:
1.75W
:
-
:
100V
:
150°C
:
3Pins
:
NPN
:
12hFE
:
-
:
8A
:
TO-252
:
MSL 1 - Unlimited
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Product Overview

The MJD122G is a 100V Silicon NPN Bipolar Complementary Darlington Power Transistor designed for general purpose amplifier and low speed switching applications. Thins transistor is surface mount replacements for 2N6040-2N6045 series, TIP120-TIP122 series and TIP125-TIP127 series as well has monolithic construction with built-in base-emitter shunt resistor.
  • Lead formed for surface mount applications in plastic sleeves
  • High DC current gain
  • Epoxy meets UL 94V-0 rating
  • AEC-Q101 qualified

Applications

Industrial, Automotive

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