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ON SEMICONDUCTOR  MJD122G  Bipolar (BJT) Single Transistor, Darlington, NPN, 100 V, 1.75 W, 8 A, 12 hFE

ON SEMICONDUCTOR MJD122G
Technical Data Sheet (142.80KB) EN See all Technical Docs

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Product Overview

The MJD122G is a 100V Silicon NPN Bipolar Complementary Darlington Power Transistor designed for general purpose amplifier and low speed switching applications. Thins transistor is surface mount replacements for 2N6040-2N6045 series, TIP120-TIP122 series and TIP125-TIP127 series as well has monolithic construction with built-in base-emitter shunt resistor.
  • Lead formed for surface mount applications in plastic sleeves
  • High DC current gain
  • Epoxy meets UL 94V-0 rating
  • AEC-Q101 qualified

 

Product Information

Transistor Polarity:
NPN
Collector Emitter Voltage V(br)ceo:
100V
Transition Frequency ft:
Power Dissipation Pd:
1.75W
DC Collector Current:
8A
DC Current Gain hFE:
12hFE
Transistor Case Style:
TO-252
No. of Pins:
3Pins
Operating Temperature Max:
150°C
Product Range:
-
Automotive Qualifications Standard:
-
MSL:
MSL 1 - Unlimited
SVHC:
No SVHC (20-Jun-2016)

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Applications

  • Industrial;
  • Automotive

Legislation and Environmental

Moisture Sensitivity Level:
MSL 1 - Unlimited
Product Traceability
RoHS Compliant:
Yes
Authorized Distributor

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