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ON SEMICONDUCTOR  MJD117T4G  Bipolar (BJT) Single Transistor, Darlington, PNP, -100 V, 25 MHz, 1.75 W, -2 A, 12000 hFE

ON SEMICONDUCTOR MJD117T4G
Technical Data Sheet (148.10KB) EN See all Technical Docs

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Product Information

Transistor Polarity:
PNP
Collector Emitter Voltage V(br)ceo:
-100V
Transition Frequency ft:
25MHz
Power Dissipation Pd:
1.75W
DC Collector Current:
-2A
DC Current Gain hFE:
12000hFE
Transistor Case Style:
TO-252
No. of Pins:
4Pins
Operating Temperature Max:
150°C
Product Range:
-
Automotive Qualifications Standard:
-
MSL:
MSL 1 - Unlimited
Operating Temperature Min:
-65 °C
SVHC:
No SVHC (17-Dec-2015)

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Legislation and Environmental

Moisture Sensitivity Level:
MSL 1 - Unlimited
Product Traceability
RoHS Compliant:
Yes
Authorized Distributor

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