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ON SEMICONDUCTOR  MJB44H11G  Bipolar (BJT) Single Transistor, General Purpose, NPN, 80 V, 50 MHz, 50 W, 10 A, 60 hFE

ON SEMICONDUCTOR MJB44H11G
Technical Data Sheet (109.74KB) EN See all Technical Docs

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Product Overview

The MJB44H11G is a 80V NPN complementary Power Transistor designed for general purpose power amplification and switching such as output or driver stages in applications such as switching regulators, converters and power amplifiers.
  • Low collector to emitter saturation voltage (VCE (sat) = 1V maximum at 8A)
  • Fast switching speeds
  • Complementary pairs simplifies designs
  • ESD rating - 3B > 8000V human body model, C > 400V machine model
  • 5V Emitter to base voltage (VEBO)
  • 2.5°C/W Thermal resistance, junction to case
  • 7.5°C/W Thermal resistance, junction to ambient

 

Product Information

Transistor Polarity:
NPN
Collector Emitter Voltage V(br)ceo:
80V
Transition Frequency ft:
50MHz
Power Dissipation Pd:
50W
DC Collector Current:
10A
DC Current Gain hFE:
60hFE
Transistor Case Style:
TO-263
No. of Pins:
3Pins
Operating Temperature Max:
150°C
Product Range:
-
Automotive Qualifications Standard:
-
MSL:
MSL 1 - Unlimited
Operating Temperature Min:
-55 °C
SVHC:
No SVHC (17-Dec-2015)

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Applications

  • Industrial;
  • Power Management

Legislation and Environmental

Moisture Sensitivity Level:
MSL 1 - Unlimited
Product Traceability
RoHS Compliant:
Yes
Authorized Distributor

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