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MJB44H11G - 

Bipolar (BJT) Single Transistor, General Purpose, NPN, 80 V, 50 MHz, 50 W, 10 A, 60 hFE

ON SEMICONDUCTOR MJB44H11G

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Manufacturer Part No:
MJB44H11G
Newark Part No.:
42K1267
Technical Datasheet:
(EN)
See all Technical Docs

Product Information

:
50W
:
-
:
80V
:
50MHz
:
150°C
:
3Pins
:
NPN
:
60hFE
:
-
:
10A
:
TO-263
:
MSL 1 - Unlimited
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Product Overview

The MJB44H11G is a 80V NPN complementary Power Transistor designed for general purpose power amplification and switching such as output or driver stages in applications such as switching regulators, converters and power amplifiers.
  • Low collector to emitter saturation voltage (VCE (sat) = 1V maximum at 8A)
  • Fast switching speeds
  • Complementary pairs simplifies designs
  • ESD rating - 3B > 8000V human body model, C > 400V machine model
  • 5V Emitter to base voltage (VEBO)
  • 2.5°C/W Thermal resistance, junction to case
  • 7.5°C/W Thermal resistance, junction to ambient

Applications

Industrial, Power Management

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