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ON SEMICONDUCTOR  MJB44H11G  Bipolar (BJT) Single Transistor, General Purpose, NPN, 80 V, 50 MHz, 50 W, 10 A, 60 hFE

ON SEMICONDUCTOR MJB44H11G
Manufacturer Part No:
MJB44H11G
Newark Part No.:
42K1267
Technical Datasheet:
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Product Overview

The MJB44H11G is a 80V NPN complementary Power Transistor designed for general purpose power amplification and switching such as output or driver stages in applications such as switching regulators, converters and power amplifiers.
  • Low collector to emitter saturation voltage (VCE (sat) = 1V maximum at 8A)
  • Fast switching speeds
  • Complementary pairs simplifies designs
  • ESD rating - 3B > 8000V human body model, C > 400V machine model
  • 5V Emitter to base voltage (VEBO)
  • 2.5°C/W Thermal resistance, junction to case
  • 7.5°C/W Thermal resistance, junction to ambient

 

Product Information

Transistor Polarity:
NPN
Collector Emitter Voltage V(br)ceo:
80V
Transition Frequency ft:
50MHz
Power Dissipation Pd:
50W
DC Collector Current:
10A
DC Current Gain hFE:
60hFE
Transistor Case Style:
TO-263
No. of Pins:
3Pins
Operating Temperature Max:
150°C
Product Range:
-
Automotive Qualifications Standard:
-
MSL:
MSL 1 - Unlimited
SVHC:
No SVHC (20-Jun-2016)

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Applications

  • Industrial;
  • Power Management

Legislation and Environmental

Moisture Sensitivity Level:
MSL 1 - Unlimited
Product Traceability
RoHS Compliant:
Yes
Authorized Distributor

Substitutes

Bipolar (BJT) Single Transistor, NPN, 80 V, 50 MHz, 50 W, 10 A, 40 hFE

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TRANSISTOR, BIPOL, NPN, 80V, TO-263-3

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