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ON SEMICONDUCTOR  MBT3904DW1T1G  Bipolar Transistor Array, General Purpose, NPN, 40 V, 150 mW, 200 mA, 300 hFE, SOT-363

ON SEMICONDUCTOR MBT3904DW1T1G
Technical Data Sheet (92.67KB) EN See all Technical Docs

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Product Overview

The MBT3904DW1T1G is a dual NPN Bipolar Transistor Array housed in a surface-mount package designed for general purpose amplifier applications. By putting two discrete devices in one package, this device is ideal for low-power surface-mount applications where board space is at a premium.
  • 100 to 300 hFE
  • ≤0.4V Low VCE(sat)
  • Simplifies circuit design
  • Reduces board space
  • Reduces component count
  • Halogen-free
  • -55 to 150°C Junction temperature range

 

Product Information

Transistor Polarity:
NPN
Collector Emitter Voltage V(br)ceo:
40V
Power Dissipation Pd:
150mW
DC Collector Current:
200mA
DC Current Gain hFE:
300hFE
Transistor Case Style:
SOT-363
No. of Pins:
6Pins
Operating Temperature Max:
150°C
Product Range:
MMBTxxxx Series
Automotive Qualifications Standard:
-
MSL:
MSL 1 - Unlimited
Operating Temperature Min:
-55 °C
Transition Frequency ft:
300 MHz
SVHC:
No SVHC (17-Dec-2015)

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Applications

  • Power Management;
  • Industrial

Legislation and Environmental

Moisture Sensitivity Level:
MSL 1 - Unlimited
Product Traceability
RoHS Compliant:
Yes
Authorized Distributor

Substitutes

Bipolar Transistor Array, NPN, 40 V, 150 mW, 200 mA, 300 hFE, SOT-363

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Price for: Each (Supplied on Full Reel)

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Bipolar Transistor Array, NPN, 40 V, 150 mW, 200 mA, 100 hFE, SC-70

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