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ON SEMICONDUCTOR  DTC144EET1G  Bipolar (BJT) Single Transistor, Brt, NPN, 50 V, 200 mW, 100 mA, 80 hFE

ON SEMICONDUCTOR DTC144EET1G
Technical Data Sheet (92.01KB) EN See all Technical Docs

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Product Overview

The DTC144EET1G is a NPN bipolar digital Bias Resistor Transistor (BRT) designed to replace a single device and its external resistor bias network. The BRT contains a single transistor with a monolithic bias network consisting of two resistors, a series base resistor and a base-emitter resistor. The BRT eliminates the individual components by integrating them into a single device.
  • Simplifies circuit design
  • Reduces board space
  • Reduces component count
  • Halogen-free
  • AEC-Q101 qualified and PPAP capable

 

Product Information

Transistor Polarity:
NPN
Collector Emitter Voltage V(br)ceo:
50V
Transition Frequency ft:
-
Power Dissipation Pd:
200mW
DC Collector Current:
100mA
DC Current Gain hFE:
80hFE
Transistor Case Style:
SC-75
No. of Pins:
3Pins
Operating Temperature Max:
150°C
Product Range:
-
Automotive Qualifications Standard:
-
Continuous Collector Current Ic:
100 mA
MSL:
MSL 1 - Unlimited
SVHC:
No SVHC (17-Dec-2015)

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Applications

  • Industrial;
  • Power Management;
  • Automotive

Legislation and Environmental

Moisture Sensitivity Level:
MSL 1 - Unlimited
Product Traceability
RoHS Compliant:
Yes
Authorized Distributor

Substitutes

Bipolar (BJT) Single Transistor, NPN, 50 V, 250 MHz, 150 mW, 100 mA, 68 hFE

ROHM

1,094:  in stock

Price for: Each (Supplied on Cut Tape)

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