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ON SEMICONDUCTOR  BD137G  Bipolar (BJT) Single Transistor, General Purpose, NPN, 60 V, 65 W, 1.5 A, 250 hFE

ON SEMICONDUCTOR BD137G
Technical Data Sheet (80.42KB) EN See all Technical Docs

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Product Overview

The BD137G is a 60V NPN bipolar medium-power Silicon Transistor designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits.
  • Complementary with BD138

 

Product Information

Transistor Polarity:
NPN
Collector Emitter Voltage V(br)ceo:
60V
Transition Frequency ft:
-
Power Dissipation Pd:
65W
DC Collector Current:
1.5A
DC Current Gain hFE:
250hFE
Transistor Case Style:
TO-225AA
No. of Pins:
3Pins
Operating Temperature Max:
150°C
Product Range:
-
Automotive Qualifications Standard:
-
MSL:
-
Operating Temperature Min:
-55 °C
SVHC:
No SVHC (17-Dec-2015)

Find similar products  grouped by common attribute

Applications

  • Industrial;
  • Power Management;
  • Audio

Legislation and Environmental

Moisture Sensitivity Level:
-
Product Traceability
RoHS Compliant:
Yes
Authorized Distributor

Substitutes

Bipolar (BJT) Single Transistor, NPN, 60 V, 12.5 W, 1.5 A, 63 hFE

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Bipolar (BJT) Single Transistor, NPN, 150 V, 8 MHz, 1.75 W, 2 A, 100 hFE

NTE ELECTRONICS

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