BCP68T1G - 

Bipolar (BJT) Single Transistor, NPN, 20 V, 60 MHz, 1.5 W, 1 A, 50 hFE

BCP68T1G - Bipolar (BJT) Single Transistor, NPN, 20 V, 60 MHz, 1.5 W, 1 A, 50 hFE

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Newark Part No.:
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Product Overview

The BCP68T1G is a NPN bipolar Silicon Epitaxial Transistor designed for use in low voltage and high current applications. The device is housed in the package which is designed for medium power surface-mount applications. This package ensures level mounting, resulting in improved thermal conduction and allows visual inspection of soldered joints. The formed leads absorb thermal stress during soldering, eliminating the possibility of damage to the die.
  • Can be soldered using wave or reflow
  • AECQ101 qualified and PPAP capable
  • PNP complement is BCP69T1


Industrial, Power Management, Automotive

Product Information

MSL 3 - 168 hours
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