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ON SEMICONDUCTOR  BCP68T1G  Bipolar (BJT) Single Transistor, NPN, 20 V, 60 MHz, 1.5 W, 1 A, 50 hFE

ON SEMICONDUCTOR BCP68T1G
Manufacturer Part No:
BCP68T1G
Newark Part No.:
29X5975
Technical Datasheet:
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Product Overview

The BCP68T1G is a NPN bipolar Silicon Epitaxial Transistor designed for use in low voltage and high current applications. The device is housed in the package which is designed for medium power surface-mount applications. This package ensures level mounting, resulting in improved thermal conduction and allows visual inspection of soldered joints. The formed leads absorb thermal stress during soldering, eliminating the possibility of damage to the die.
  • Can be soldered using wave or reflow
  • AECQ101 qualified and PPAP capable
  • PNP complement is BCP69T1

Product Information

Transistor Polarity:
NPN
Collector Emitter Voltage V(br)ceo:
20V
Transition Frequency ft:
60MHz
Power Dissipation Pd:
1.5W
DC Collector Current:
1A
DC Current Gain hFE:
50hFE
Transistor Case Style:
SOT-223
No. of Pins:
4Pins
Operating Temperature Max:
150°C
Product Range:
-
Automotive Qualifications Standard:
-
MSL:
MSL 3 - 168 hours
SVHC:
No SVHC (12-Jan-2017)

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Applications

  • Industrial
  • Power Management
  • Automotive

Legislation and Environmental

RoHS Compliant:
Yes
Authorized Distributor

Associated Products