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ON SEMICONDUCTOR  BC817-40LT1G  Bipolar (BJT) Single Transistor, NPN, 45 V, 100 MHz, 225 mW, 500 mA, 600 hFE

ON SEMICONDUCTOR BC817-40LT1G
Manufacturer Part No:
BC817-40LT1G
Newark Part No.:
84K8723
Technical Datasheet:
See all Technical Docs

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Product Overview

The BC817-40LT1G is a 45V NPN silicon Bipolar Transistor designed for use in linear and switching applications. The device is suitable for lower power surface mount applications, ESD protection, polarity reversal protection, data line protection, inductive load protection and steering logic.
  • Halogen-free/BFR-free
  • 50V Collector to base voltage (VCBO)
  • 5V Emitter to base voltage (VEBO)
  • 556°C/W Thermal resistance, junction to ambient

 

Product Information

Transistor Polarity:
NPN
Collector Emitter Voltage V(br)ceo:
45V
Transition Frequency ft:
100MHz
Power Dissipation Pd:
225mW
DC Collector Current:
500mA
DC Current Gain hFE:
600hFE
Transistor Case Style:
SOT-23
No. of Pins:
3Pins
Operating Temperature Max:
150°C
Product Range:
-
Automotive Qualifications Standard:
-
MSL:
MSL 1 - Unlimited
SVHC:
No SVHC (12-Jan-2017)

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Applications

  • Industrial
  • Power Management
  • Safety

Legislation and Environmental

Product Traceability
RoHS Compliant:
Yes
Authorized Distributor

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