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BC639G - 

Bipolar (BJT) Single Transistor, NPN, 80 V, 200 MHz, 625 mW, 1 A, 40 hFE

ON SEMICONDUCTOR BC639G

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Manufacturer Part No:
BC639G
Newark Part No.:
26K3455
Technical Datasheet:
(EN)
See all Technical Docs

Product Information

:
625mW
:
-
:
80V
:
200MHz
:
150°C
:
3Pins
:
NPN
:
40hFE
:
-
:
1A
:
TO-92
:
MSL 1 - Unlimited
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Product Overview

The BC639G is a NPN silicon high current Transistor, 80VDC collector-emitter voltage and collector-base voltage, 5VDC emitter-base voltage, designed for medium power applications.
  • 200°C/W Junction-to-ambient thermal resistance
  • 83.3°C/W Junction-to-case thermal resistance

Applications

Industrial, Consumer Electronics