ON SEMICONDUCTOR  BC639G  Bipolar (BJT) Single Transistor, NPN, 80 V, 200 MHz, 625 mW, 1 A, 40


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Product Overview

The BC639G is a NPN silicon high current Transistor, 80VDC collector-emitter voltage and collector-base voltage, 5VDC emitter-base voltage, designed for medium power applications.
  • 200°C/W Junction-to-ambient thermal resistance
  • 83.3°C/W Junction-to-case thermal resistance


Industrial; Consumer Electronics
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Product Specifications, Documents & More

  • Collector Emitter Voltage V(br)ceo: 80V
  • DC Collector Current: 1A
  • DC Current Gain hFE: 40
  • MSL: MSL 1 - Unlimited
  • No. of Pins: 3
  • Operating Temperature Max: 150°C
  • Operating Temperature Min: -55°C
  • Power Dissipation Pd: 625mW
  • SVHC: To Be Advised
  • Transistor Case Style: TO-92
  • Transistor Polarity: NPN
  • Transition Frequency Typ ft: 200MHz

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Availability: No Longer Manufactured


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