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ON SEMICONDUCTOR  BC639G  Bipolar (BJT) Single Transistor, NPN, 80 V, 200 MHz, 625 mW, 1 A, 40 hFE

ON SEMICONDUCTOR BC639G
Technical Data Sheet (92.85KB) EN See all Technical Docs

Image is for illustrative purposes only. Please refer to product description.

Product Overview

The BC639G is a NPN silicon high current Transistor, 80VDC collector-emitter voltage and collector-base voltage, 5VDC emitter-base voltage, designed for medium power applications.
  • 200°C/W Junction-to-ambient thermal resistance
  • 83.3°C/W Junction-to-case thermal resistance

 

Product Information

Transistor Polarity:
NPN
Collector Emitter Voltage V(br)ceo:
80V
Transition Frequency ft:
200MHz
Power Dissipation Pd:
625mW
DC Collector Current:
1A
DC Current Gain hFE:
40hFE
Transistor Case Style:
TO-92
No. of Pins:
3Pins
Operating Temperature Max:
150°C
Product Range:
-
Automotive Qualifications Standard:
-
MSL:
MSL 1 - Unlimited
Operating Temperature Min:
-55 °C
SVHC:
To Be Advised

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Applications

  • Industrial;
  • Consumer Electronics

Legislation and Environmental

Moisture Sensitivity Level:
MSL 1 - Unlimited
RoHS Compliant:
Yes
Authorized Distributor