ON SEMICONDUCTOR  BC639G  Bipolar (BJT) Single Transistor, NPN, 80 V, 200 MHz, 625 mW, 1 A, 40


Image is for illustrative purposes only. Please refer to product description.

Product Overview

The BC639G is a NPN silicon high current Transistor, 80VDC collector-emitter voltage and collector-base voltage, 5VDC emitter-base voltage, designed for medium power applications.
  • 200°C/W Junction-to-ambient thermal resistance
  • 83.3°C/W Junction-to-case thermal resistance


Industrial; Consumer Electronics
Back to top

Product Specifications, Documents & More

  • Collector Emitter Voltage V(br)ceo: 80V
  • DC Collector Current: 1A
  • DC Current Gain hFE: 40
  • MSL: MSL 1 - Unlimited
  • No. of Pins: 3
  • Operating Temperature Max: 150°C
  • Operating Temperature Min: -55°C
  • Power Dissipation Pd: 625mW
  • SVHC: No SVHC (17-Dec-2014)
  • Transistor Case Style: TO-92
  • Transistor Polarity: NPN
  • Transition Frequency Typ ft: 200MHz

Find similar products  grouped by common attribute


Availability: No Longer Manufactured


Pricing is unavailable. Please contact customer services.


Legislation and Environmental

Back to top

Similar Products

Find products functionally similar to this one. Select one of the following links, and you will be taken to a product group page that presents all products in this category that share the given attribute.

Back to top

Customer Reviews

Customer Q&A Exchange


Like to see information about this product from other customers?

 Read discussions, blogs, documents from our community members.


Post a question to one of our experts or start a discussion and get responses from supplier experts and fellow engineers in our community.
Back to top

Customers Also Bought