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ON SEMICONDUCTOR  2N6287G  Bipolar (BJT) Single Transistor, PNP, 100 V, 160 W, 20 A, 18 hFE

ON SEMICONDUCTOR 2N6287G
Technical Data Sheet (135.70KB) EN See all Technical Docs

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Product Overview

The 2N6287G is a -100V Silicon PNP Bipolar Complementary Darlington Power Transistor designed for general purpose amplifier and low frequency switching applications. The transistor has monolithic construction with built-in base-emitter shunt resistor.
  • High DC current gain
  • Collector-emitter sustaining voltage(Vce (sus) = 100VDC minimum)
  • Collector-base voltage (Vcbo = 100V)
  • Emitter-base voltage (Vcbo = 5V)

 

Product Information

Transistor Polarity:
PNP
Collector Emitter Voltage V(br)ceo:
100V
Transition Frequency ft:
-
Power Dissipation Pd:
160W
DC Collector Current:
20A
DC Current Gain hFE:
18hFE
Transistor Case Style:
TO-3
No. of Pins:
2Pins
Operating Temperature Max:
200°C
Product Range:
-
Automotive Qualifications Standard:
-
MSL:
MSL 1 - Unlimited
Operating Temperature Min:
-65 °C
SVHC:
No SVHC (17-Dec-2015)

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Applications

  • Industrial

Legislation and Environmental

Moisture Sensitivity Level:
MSL 1 - Unlimited
Product Traceability
RoHS Compliant:
Yes
Authorized Distributor

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