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ON SEMICONDUCTOR  2N6287G  Bipolar (BJT) Single Transistor, PNP, 100 V, 160 W, 20 A, 18 hFE

ON SEMICONDUCTOR 2N6287G
Technical Data Sheet (135.70KB) EN See all Technical Docs

Image is for illustrative purposes only. Please refer to product description.

Product Overview

The 2N6287G is a -100V Silicon PNP Bipolar Complementary Darlington Power Transistor designed for general purpose amplifier and low frequency switching applications. The transistor has monolithic construction with built-in base-emitter shunt resistor.
  • High DC current gain
  • Collector-emitter sustaining voltage(Vce (sus) = 100VDC minimum)
  • Collector-base voltage (Vcbo = 100V)
  • Emitter-base voltage (Vcbo = 5V)

 

Product Information

Transistor Polarity:
PNP
Collector Emitter Voltage V(br)ceo:
100V
Transition Frequency ft:
-
Power Dissipation Pd:
160W
DC Collector Current:
20A
DC Current Gain hFE:
18hFE
Transistor Case Style:
TO-3
No. of Pins:
2Pins
Operating Temperature Max:
200°C
Product Range:
-
MSL:
MSL 1 - Unlimited
Operating Temperature Min:
-65 °C
SVHC:
No SVHC (17-Dec-2015)

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Applications

  • Industrial

Legislation and Environmental

Moisture Sensitivity Level:
MSL 1 - Unlimited
Product Traceability
RoHS Compliant:
Yes

Substitutes

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