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2N6287G - 

Bipolar (BJT) Single Transistor, PNP, 100 V, 160 W, 20 A, 18 hFE

ON SEMICONDUCTOR 2N6287G

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Manufacturer Part No:
2N6287G
Newark Part No.:
26K5316
Technical Datasheet:
(EN)
See all Technical Docs

Product Information

:
160W
:
-
:
100V
:
-
:
200°C
:
2Pins
:
PNP
:
18hFE
:
-
:
20A
:
TO-3
:
MSL 1 - Unlimited
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Product Overview

The 2N6287G is a -100V Silicon PNP Bipolar Complementary Darlington Power Transistor designed for general purpose amplifier and low frequency switching applications. The transistor has monolithic construction with built-in base-emitter shunt resistor.
  • High DC current gain
  • Collector-emitter sustaining voltage(Vce (sus) = 100VDC minimum)
  • Collector-base voltage (Vcbo = 100V)
  • Emitter-base voltage (Vcbo = 5V)

Applications

Industrial

Substitutes

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