Low

ON SEMICONDUCTOR  2N6286G  Bipolar (BJT) Single Transistor, Darlington, PNP, 80 V, 160 W, 40 A, 18 hFE

ON SEMICONDUCTOR 2N6286G
Technical Data Sheet (135.70KB) EN See all Technical Docs

Image is for illustrative purposes only. Please refer to product description.

Product Overview

The 2N6286G is a PNP Darlington Complementary Silicon Power Transistor designed for general-purpose amplifier and low-frequency switching applications. It features monolithic construction with built-in base-emitter shunt resistors.

 

Product Information

Transistor Polarity:
PNP
Collector Emitter Voltage V(br)ceo:
80V
Transition Frequency ft:
-
Power Dissipation Pd:
160W
DC Collector Current:
40A
DC Current Gain hFE:
18hFE
Transistor Case Style:
TO-3
No. of Pins:
2Pins
Operating Temperature Max:
200°C
Product Range:
-
Automotive Qualifications Standard:
-
MSL:
-
Operating Temperature Min:
-65 °C
SVHC:
No SVHC (17-Dec-2015)

Find similar products  grouped by common attribute

Applications

  • Industrial

Legislation and Environmental

Moisture Sensitivity Level:
-
Product Traceability
RoHS Compliant:
Yes
Authorized Distributor

Substitutes

Bipolar (BJT) Single Transistor, PNP, -100 V, 160 W, -20 A, 4000 hFE

NTE ELECTRONICS

35:  in stock

Price for: Each

1+ $9.62 50+ $8.74 100+ $7.99 250+ $7.38 More pricing

Buy

Associated Products