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ON SEMICONDUCTOR  2N4401G  Bipolar (BJT) Single Transistor, General Purpose, NPN, 40 V, 250 MHz, 625 mW, 600 mA, 300 hFE

ON SEMICONDUCTOR 2N4401G
Technical Data Sheet (195.11KB) EN See all Technical Docs

Image is for illustrative purposes only. Please refer to product description.

Product Overview

The 2N4401G is a NPN silicon general purpose Bipolar Transistor, designed for use in linear and switching applications.
  • 200°C/W Junction-to-ambient thermal resistance
  • 83.3°C/W Junction-to-case thermal resistance

 

Product Information

Transistor Polarity:
NPN
Collector Emitter Voltage V(br)ceo:
40V
Transition Frequency ft:
250MHz
Power Dissipation Pd:
625mW
DC Collector Current:
600mA
DC Current Gain hFE:
300hFE
Transistor Case Style:
TO-92
No. of Pins:
3Pins
Operating Temperature Max:
150°C
Product Range:
-
MSL:
MSL 1 - Unlimited
Operating Temperature Min:
-55 °C
SVHC:
To Be Advised

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Applications

  • Audio;
  • Industrial

Legislation and Environmental

Moisture Sensitivity Level:
MSL 1 - Unlimited
RoHS Compliant:
Yes

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