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2N3055G - 

Bipolar (BJT) Single Transistor, General Purpose, NPN, 60 V, 2.5 MHz, 115 W, 15 A, 70 hFE

2N3055G - Bipolar (BJT) Single Transistor, General Purpose, NPN, 60 V, 2.5 MHz, 115 W, 15 A, 70 hFE

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Manufacturer Part No:
2N3055G
Newark Part No.:
98H1011
Product Range
2NXXXX Series
Technical Datasheet:
(EN)
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Product Overview

The 2N3055G is a 60V Silicon NPN Bipolar Complementary Power Transistor designed for general purpose switching and amplifier applications.
  • Excellent safe operating area
  • DC Current gain(hFE = 20 to 70 at Ic = 4ADC)
  • Collector-emitter saturation voltage(Vce (sat) = 1.1VDC maximum at Ic = 4ADC)

Applications

Industrial

Product Information

:
NPN
:
60V
:
2.5MHz
:
115W
:
15A
:
70hFE
:
TO-204AA
:
3Pins
:
200°C
:
2NXXXX Series
:
-
:
-
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Bipolar (BJT) Single Transistor, NPN, 60 V, 800 kHz, 115 W, 15 A, 5 hFE

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Awaiting Delivery

Available for backorder to lead times shown

 
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More stock available week commencing 10/22/18

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Alternatives Available

21M5149 - Bipolar (BJT) Single Transistor, NPN, 60 V, 2.5 MHz, 115 W, 15 A, 70 hFE

26AC6350 - BIP T03 NPN 15A 60V

31C2794 - TRANSISTOR,BJT,PAIR,NPN,60V V(BR)CEO,15A I(C),TO-3

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