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ON SEMICONDUCTOR  2N3055G  Bipolar (BJT) Single Transistor, General Purpose, NPN, 60 V, 2.5 MHz, 115 W, 15 A, 70 hFE

ON SEMICONDUCTOR 2N3055G
Technical Data Sheet (70.90KB) EN See all Technical Docs

Image is for illustrative purposes only. Please refer to product description.

Product Overview

The 2N3055G is a 60V Silicon NPN Bipolar Complementary Power Transistor designed for general purpose switching and amplifier applications.
  • Excellent safe operating area
  • DC Current gain(hFE = 20 to 70 at Ic = 4ADC)
  • Collector-emitter saturation voltage(Vce (sat) = 1.1VDC maximum at Ic = 4ADC)

 

Product Information

Transistor Polarity:
NPN
Collector Emitter Voltage V(br)ceo:
60V
Transition Frequency ft:
2.5MHz
Power Dissipation Pd:
115W
DC Collector Current:
15A
DC Current Gain hFE:
70hFE
Transistor Case Style:
TO-204AA
No. of Pins:
3Pins
Operating Temperature Max:
200°C
Product Range:
2NXXXX Series
MSL:
-
Operating Temperature Min:
-65 °C
SVHC:
No SVHC (17-Dec-2015)

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Applications

  • Industrial

Legislation and Environmental

Moisture Sensitivity Level:
-
Product Traceability
RoHS Compliant:
Yes

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