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ON SEMICONDUCTOR  2N3055G  Bipolar (BJT) Single Transistor, General Purpose, NPN, 60 V, 2.5 MHz, 115 W, 15 A, 70 hFE

ON SEMICONDUCTOR 2N3055G
Manufacturer Part No:
2N3055G
Newark Part No.:
98H1011
Product Range
2NXXXX Series
Technical Datasheet:
See all Technical Docs

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Product Overview

The 2N3055G is a 60V Silicon NPN Bipolar Complementary Power Transistor designed for general purpose switching and amplifier applications.
  • Excellent safe operating area
  • DC Current gain(hFE = 20 to 70 at Ic = 4ADC)
  • Collector-emitter saturation voltage(Vce (sat) = 1.1VDC maximum at Ic = 4ADC)

 

Product Information

Transistor Polarity:
NPN
Collector Emitter Voltage V(br)ceo:
60V
Transition Frequency ft:
2.5MHz
Power Dissipation Pd:
115W
DC Collector Current:
15A
DC Current Gain hFE:
70hFE
Transistor Case Style:
TO-204AA
No. of Pins:
3Pins
Operating Temperature Max:
200°C
Product Range:
2NXXXX Series
Automotive Qualifications Standard:
-
MSL:
-
SVHC:
No SVHC (20-Jun-2016)

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Applications

  • Industrial

Legislation and Environmental

Moisture Sensitivity Level:
-
Product Traceability
RoHS Compliant:
Yes
Authorized Distributor

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