ON SEMICONDUCTOR  2N3055G  Bipolar (BJT) Single Transistor, General Purpose, NPN, 60 V, 2.5 MHz, 115 W, 15 A, 70

ON SEMICONDUCTOR 2N3055G

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Product Overview


The 2N3055G is a 60V Silicon NPN Bipolar Complementary Power Transistor designed for general purpose switching and amplifier applications.
  • Excellent safe operating area
  • DC Current gain(hFE = 20 to 70 at Ic = 4ADC)
  • Collector-emitter saturation voltage(Vce (sat) = 1.1VDC maximum at Ic = 4ADC)

Applications

Industrial
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Product Information


  • Transistor Polarity NPN
  • Collector Emitter Voltage V(br)ceo 60V
  • Transition Frequency ft 2.5MHz
  • Power Dissipation Pd 115W
  • DC Collector Current 15A
  • DC Current Gain hFE 70
  • Transistor Case Style TO-204AA
  • No. of Pins 3Pins
  • Operating Temperature Max 200°C
  • MSL -
  • Operating Temperature Min -65 °C
  • SVHC No SVHC (15-Jun-2015)

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Availability

Availability:  4,240


  • 4,240 in stock for same day shipping
 
Check stock and lead times
    More stock available week commencing 6/20/16

Price for: Each

Minimum order quantity: 1

Order multiple quantity: 1

Price: $2.48 $2.48

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Price

Quantity List Price
1 - 9 $2.48
10 - 99 $2.12
100 - 499 $1.63
500 - 999 $1.44
1000 - 2499 $1.14
2500 - 4999 $1.01
5000 - 9999 $0.983
10000+ $0.908
 
 
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