Low

ON SEMICONDUCTOR  2N3055AG  Bipolar (BJT) Single Transistor, General Purpose, NPN, 60 V, 6 MHz, 115 W, 15 A, 70 hFE

ON SEMICONDUCTOR 2N3055AG
Technical Data Sheet (137.41KB) EN See all Technical Docs

The actual product may differ from image shown

Product Overview

The 2N3055AG is a 60V NPN complementary silicon Bipolar Transistor designed for high power audio, stepping motor and other linear applications. It can also be used in power switching circuits such as relay or solenoid drivers, DC-to-DC converters, inverters or for inductive loads requiring higher safe operating area than the 2N3055.
  • High current-gain - bandwidth
  • Safe operating area
  • 100V Collector to base voltage (VCBO)
  • 7V Emitter to base voltage (VEBO)
  • 7A Base current (IB)
  • 1.52°C/W Thermal resistance, junction to case

 

Product Information

Transistor Polarity:
NPN
Collector Emitter Voltage V(br)ceo:
60V
Transition Frequency ft:
6MHz
Power Dissipation Pd:
115W
DC Collector Current:
15A
DC Current Gain hFE:
70hFE
Transistor Case Style:
TO-204
No. of Pins:
2Pins
Operating Temperature Max:
200°C
Product Range:
-
Automotive Qualifications Standard:
-
MSL:
-
Operating Temperature Min:
-65 °C
SVHC:
No SVHC (17-Dec-2015)

Find similar products  grouped by common attribute

Applications

  • Audio;
  • Motor Drive & Control;
  • Industrial;
  • Power Management

Legislation and Environmental

Moisture Sensitivity Level:
-
Product Traceability
RoHS Compliant:
Yes
Authorized Distributor

Associated Products