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2N3055AG - 

Bipolar (BJT) Single Transistor, General Purpose, NPN, 60 V, 6 MHz, 115 W, 15 A, 70 hFE

2N3055AG - Bipolar (BJT) Single Transistor, General Purpose, NPN, 60 V, 6 MHz, 115 W, 15 A, 70 hFE

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Manufacturer Part No:
2N3055AG
Newark Part No.:
42K3127
Technical Datasheet:
(EN)
See all Technical Docs

Product Overview

The 2N3055AG is a 60V NPN complementary silicon Bipolar Transistor designed for high power audio, stepping motor and other linear applications. It can also be used in power switching circuits such as relay or solenoid drivers, DC-to-DC converters, inverters or for inductive loads requiring higher safe operating area than the 2N3055.
  • High current-gain - bandwidth
  • Safe operating area
  • 100V Collector to base voltage (VCBO)
  • 7V Emitter to base voltage (VEBO)
  • 7A Base current (IB)
  • 1.52°C/W Thermal resistance, junction to case

Applications

Audio, Motor Drive & Control, Industrial, Power Management

Product Information

:
NPN
:
60V
:
6MHz
:
115W
:
15A
:
70hFE
:
TO-204
:
2Pins
:
200°C
:
-
:
-
:
-
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