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ON SEMICONDUCTOR  1N5822G  Schottky Rectifier, General Purpose, Single, 40 V, 3 A, DO-201AD, 2 Pins, 525 mV

ON SEMICONDUCTOR 1N5822G
Technical Data Sheet (123.80KB) EN See all Technical Docs

Image is for illustrative purposes only. Please refer to product description.

Product Overview

The 1N5822G is a 2-pin 40V general purpose Schottky Barrier Rectifier features an epitaxial construction with oxide passivation and metal overlap contact. The Schottky rectifier employs the Schottky barrier principle in a large area metal-to-silicon power diode. It has state-of-the-art geometry. It is ideally suited for use as rectifier in low-voltage, high-frequency inverters, freewheeling diodes and polarity protection diodes.
  • Extremely low vF
  • Low power loss/high efficiency
  • Low stored charge, majority carrier conduction
  • Cathode indicated by polarity band

 

Product Information

Diode Configuration:
Single
Repetitive Reverse Voltage Vrrm Max:
40V
Forward Current If(AV):
3A
Diode Case Style:
DO-201AD
Reverse Recovery Time trr Max:
No. of Pins:
2Pins
Forward Voltage VF Max:
525mV
Forward Surge Current Ifsm Max:
80A
Operating Temperature Max:
125°C
Packaging:
Each
Product Range:
1N5822 Series
Automotive Qualifications Standard:
-
MSL:
-
Operating Temperature Min:
-65 °C
SVHC:
No SVHC (17-Dec-2015)

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Applications

  • Industrial;
  • Automation & Process Control;
  • Signal Processing

Legislation and Environmental

Moisture Sensitivity Level:
-
Product Traceability
RoHS Compliant:
Yes
Authorized Distributor

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