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ON SEMICONDUCTOR  1N5819G  Schottky Rectifier, General Purpose, Single, 40 V, 1 A, DO-204AL, 2 Pins, 600 mV

ON SEMICONDUCTOR 1N5819G

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Product Overview

The 1N5819G is an axial-leaded Schottky Barrier Rectifier with an epoxy molded case, all external surfaces corrosion-resistant and terminal lead is readily solderable finish. This series employs the Schottky barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features chrome barrier metal, epitaxial construction with oxide passivation and metal overlap contact. It is ideally suited for use as rectifier in low-voltage, high-frequency inverter and freewheeling diodes.
  • Cathode indicated by polarity band
  • Extremely low forward voltage
  • Low stored charge and majority carrier conduction
  • Low power loss and high efficiency
  • 48V Non-repetitive peak reverse voltage
  • 28V RMS reverse voltage
  • 80°C/W Junction-to-ambient thermal resistance

Applications

Power Management; Safety
ESD sensitive device, take proper precaution while handling the device.

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Product Information

Diode Configuration:
Single
Repetitive Reverse Voltage Vrrm Max:
40V
Forward Current If(AV):
1A
Diode Case Style:
DO-204AL
No. of Pins:
2Pins
Forward Voltage VF Max:
600mV
Forward Surge Current Ifsm Max:
25A
Operating Temperature Max:
125°C
Packaging:
Each
Product Range:
1N5819 Series
MSL:
-
Operating Temperature Min:
-65 °C
SVHC:
No SVHC (17-Dec-2015)

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Legislation and Environmental

Moisture Sensitivity Level:
-
Product Traceability
RoHS Compliant:
Yes

Applications

  • Power Management;
  • Safety

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Schottky Rectifier, Single, 40 V, 1 A, DO-41, 2 Pins, 600 mV

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