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ON SEMICONDUCTOR  1N5819G  Schottky Rectifier, General Purpose, 40 V, 1 A, Single, DO-204AL, 2 Pins, 600 mV

ON SEMICONDUCTOR 1N5819G
Technical Data Sheet (75.52KB) EN See all Technical Docs

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Product Overview

The 1N5819G is an axial-leaded Schottky Barrier Rectifier with an epoxy molded case, all external surfaces corrosion-resistant and terminal lead is readily solderable finish. This series employs the Schottky barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features chrome barrier metal, epitaxial construction with oxide passivation and metal overlap contact. It is ideally suited for use as rectifier in low-voltage, high-frequency inverter and freewheeling diodes.
  • Cathode indicated by polarity band
  • Extremely low forward voltage
  • Low stored charge and majority carrier conduction
  • Low power loss and high efficiency
  • 48V Non-repetitive peak reverse voltage
  • 28V RMS reverse voltage
  • 80°C/W Junction-to-ambient thermal resistance
ESD sensitive device, take proper precaution while handling the device.

 

Product Information

Repetitive Reverse Voltage Vrrm Max:
40V
Forward Current If(AV):
1A
Diode Configuration:
Single
Diode Case Style:
DO-204AL
Reverse Recovery Time trr Max:
No. of Pins:
2Pins
Forward Voltage VF Max:
600mV
Forward Surge Current Ifsm Max:
25A
Operating Temperature Max:
125°C
Packaging:
Each
Product Range:
1N5819 Series
Automotive Qualifications Standard:
-
MSL:
-
Operating Temperature Min:
-65 °C
SVHC:
No SVHC (17-Dec-2015)

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Applications

  • Power Management;
  • Safety

Legislation and Environmental

Moisture Sensitivity Level:
-
Product Traceability
RoHS Compliant:
Yes
Authorized Distributor

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