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NXP  PDTC114ET,215  Bipolar (BJT) Single Transistor, Brt, NPN, 50 V, 230 MHz, 250 mW, 100 mA, 30 hFE

NXP PDTC114ET,215
Technical Data Sheet (711.19KB) EN See all Technical Docs

Image is for illustrative purposes only. Please refer to product description.

Product Overview

The PDTC114ET,215 is a NPN Resistor-equipped Transistor family in a small surface mounted device plastic package with 3 leads, built-in bias resistors, simplifies circuit design and reduces component count.
  • 100mA Output current capability
  • Reduces pick and place costs
  • AEC-Q101 Qualified

 

Product Information

Transistor Polarity:
NPN
Collector Emitter Voltage V(br)ceo:
50V
Transition Frequency ft:
230MHz
Power Dissipation Pd:
250mW
DC Collector Current:
100mA
DC Current Gain hFE:
30hFE
Transistor Case Style:
SOT-23
No. of Pins:
3Pins
Operating Temperature Max:
150°C
Product Range:
-
Continuous Collector Current Ic:
100 mA
MSL:
MSL 1 - Unlimited
SVHC:
No SVHC (17-Dec-2015)

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Applications

  • Automotive;
  • Industrial

Legislation and Environmental

Moisture Sensitivity Level:
MSL 1 - Unlimited
Product Traceability
RoHS Compliant:
Yes

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