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NXP  PDTA114ET,215  Bipolar (BJT) Single Transistor, PNP, -50 V, 180 MHz, 250 mW, 100 mA, 30 hFE

NXP PDTA114ET,215
Technical Data Sheet (722.09KB) EN See all Technical Docs

Image is for illustrative purposes only. Please refer to product description.

 

Product Information

Transistor Polarity:
PNP
Collector Emitter Voltage V(br)ceo:
-50V
Transition Frequency ft:
180MHz
Power Dissipation Pd:
250mW
DC Collector Current:
100mA
DC Current Gain hFE:
30hFE
Transistor Case Style:
SOT-23
No. of Pins:
3Pins
Operating Temperature Max:
150°C
Product Range:
-
Continuous Collector Current Ic:
-100 mA
MSL:
MSL 1 - Unlimited
SVHC:
No SVHC (17-Dec-2015)

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Legislation and Environmental

Moisture Sensitivity Level:
MSL 1 - Unlimited
RoHS Compliant:
Yes

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Bipolar (BJT) Single Transistor, PNP, 50 V, 180 MHz, 250 mW, 100 mA, 30 hFE

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