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NXP  PDTA114ET,215  Bipolar (BJT) Single Transistor, PNP, -50 V, 180 MHz, 250 mW, 100 mA, 30 hFE

NXP PDTA114ET,215

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Product Information

Transistor Polarity:
PNP
Collector Emitter Voltage V(br)ceo:
-50V
Transition Frequency ft:
180MHz
Power Dissipation Pd:
250mW
DC Collector Current:
100mA
DC Current Gain hFE:
30hFE
Transistor Case Style:
SOT-23
No. of Pins:
3Pins
Operating Temperature Max:
150°C
Product Range:
-
Continuous Collector Current Ic:
-100 mA
MSL:
MSL 1 - Unlimited
SVHC:
No SVHC (17-Dec-2015)

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Legislation and Environmental

Moisture Sensitivity Level:
MSL 1 - Unlimited
RoHS Compliant:
Yes

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