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NXP  PDTA114ET,215  Bipolar (BJT) Single Transistor, PNP, -50 V, 180 MHz, 250 mW, 100 mA, 30 hFE

NXP PDTA114ET,215
Technical Data Sheet (722.09KB) EN See all Technical Docs

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Product Overview

The PDTA114ET,215 is a 10kΩ PNP Resistor Equipped Transistor (RET) in a small surface-mount plastic package.
  • Reduces component count
  • Built-in bias resistors
  • Reduces pick and place costs
  • Simplifies circuit design
  • AEC-Q101 qualified
  • NPN complement is PDTC114ET
  • 03 Marking code

 

Product Information

Transistor Polarity:
PNP
Collector Emitter Voltage V(br)ceo:
-50V
Transition Frequency ft:
180MHz
Power Dissipation Pd:
250mW
DC Collector Current:
100mA
DC Current Gain hFE:
30hFE
Transistor Case Style:
SOT-23
No. of Pins:
3Pins
Operating Temperature Max:
150°C
Product Range:
-
Automotive Qualifications Standard:
-
Continuous Collector Current Ic:
-100 mA
MSL:
MSL 1 - Unlimited
SVHC:
No SVHC (17-Dec-2015)

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Applications

  • Industrial;
  • Automotive;
  • Power Management

Legislation and Environmental

Moisture Sensitivity Level:
MSL 1 - Unlimited
RoHS Compliant:
Yes
Authorized Distributor

Substitutes

Associated Products