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NXP  PBSS4160DPN,115  Bipolar - RF Power Transistor, 220 MHz, 500 hFE, 1 A

NXP PBSS4160DPN,115
Technical Data Sheet (258.83KB) EN See all Technical Docs

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Product Overview

The PBSS4160DPN,115 is a NPN-PNP BISS Transistor encapsulated in surface-mount plastic package. It offers low collector to emitter saturation voltage and high collector current capability. It is designed for use with complementary MOSFET driver, half and full bridge motor drivers and dual low power switches (e.g. motors, fans) applications.
  • High collector current gain at high IC
  • High efficiency due to less heat generation
  • Smaller required printed-circuit board (PCB) area than for conventional transistors

 

Product Information

Operating Frequency Min:
-
Transition Frequency ft:
220MHz
DC Current Gain hFE:
500hFE
Continuous Collector Current Ic:
1A
Collector Emitter Voltage V(br)ceo:
60V
Power Gain, Gp:
-
Power Dissipation Pd:
290mW
Power @ 1dB Gain Compression, P1dB:
-
RF Transistor Case:
SOT-457
No. of Pins:
6 Pin
Noise Figure Typ:
-
MSL:
MSL 1 - Unlimited
Forward Current Transfer Ratio:
-
Product Range:
-
SVHC:
No SVHC (17-Dec-2015)

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Applications

  • Industrial;
  • Automotive;
  • Power Management

Legislation and Environmental

Moisture Sensitivity Level:
MSL 1 - Unlimited
Product Traceability
RoHS Compliant:
Yes
Authorized Distributor

Substitutes

PBSS4160DPN,115

Trans GP BJT NPN/PNP 60V 1A/0.9A Automotive 6-Pin TSOP T/R

NXP

0

Price for: Each (Supplied on Full Reel)

3000+ $0.224 6000+ $0.208 15000+ $0.201 30000+ $0.193 More pricing

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