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NXP  PBSS4160DPN,115  Bipolar - RF Power Transistor, 220 MHz, 500 hFE, 1 A

NXP PBSS4160DPN,115
Technical Data Sheet (258.83KB) EN See all Technical Docs

Image is for illustrative purposes only. Please refer to product description.

 

Product Information

Operating Frequency Min:
-
Transition Frequency ft:
220MHz
DC Current Gain hFE:
500hFE
Continuous Collector Current Ic:
1A
Collector Emitter Voltage V(br)ceo:
60V
Power Gain, Gp:
-
Power Dissipation Pd:
290mW
Power @ 1dB Gain Compression, P1dB:
-
RF Transistor Case:
SOT-457
No. of Pins:
6 Pin
Noise Figure Typ:
-
MSL:
MSL 1 - Unlimited
Operating Temperature Min:
-65 °C
Forward Current Transfer Ratio:
-
Product Range:
-
SVHC:
No SVHC (17-Dec-2015)

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Legislation and Environmental

Moisture Sensitivity Level:
MSL 1 - Unlimited
Product Traceability
RoHS Compliant:
Yes

Substitutes

PBSS4160DPN,115

Trans GP BJT NPN/PNP 60V 1A/0.9A Automotive 6-Pin TSOP T/R

NXP

0

Price for: Each (Supplied on Full Reel)

6000+ $0.208 15000+ $0.201 30000+ $0.193 75000+ $0.185

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