Low

BSH103,215 - 

MOSFET Transistor, N Channel, 850 mA, 30 V, 0.4 ohm, 4.5 V, 400 mV

NEXPERIA BSH103,215

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Manufacturer:
NEXPERIA NEXPERIA
Manufacturer Part No:
BSH103,215
Newark Part No.:
75R4687
Technical Datasheet:
(EN)
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Product Information

:
750mW
:
400mV
:
-
:
150°C
:
850mA
:
3Pins
:
4.5V
:
N Channel
:
-
:
TO-236AB
:
0.4ohm
:
30V
:
MSL 1 - Unlimited
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Product Overview

The BSH103 from NXP is a surface mount, N channel enhancement mode MOS transistor in SOT-23 package using TrenchMOS technology. This transistor features very low threshold, high speed switching, no secondary breakdown and direct interface to CMOS, TTL. BSH103 is designed and qualified for use in high frequency applications, glue logic interface between logic blocks or periphery, computing, battery powered applications.
  • Suitable for use with all 5V logic families
  • Suitable for very low gate drive sources
  • Drain to source voltage (Vds) of 30V
  • Gate to source voltage of ±8V
  • Drain current (Id) of 850mA
  • Power dissipation (Pd) of 750mW
  • Operating junction temperature range from -55°C to 150°C

Applications

Power Management, Consumer Electronics, Portable Devices, Industrial

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