Low

NXP  BLT81,115  Bipolar - RF Transistor, UHF, NPN, 9.5 V, 900 MHz, 2 W, 500 mA, 25 hFE

NXP BLT81,115
Manufacturer:
NXP NXP
Manufacturer Part No:
BLT81,115
Newark Part No.:
75R4686
Technical Datasheet:
See all Technical Docs

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Product Overview

The BLT81,115 is a 9.5V NPN Silicon Planar Epitaxial UHF Power Transistor in SMD encapsulation. Suitable for use in hand held radio equipment in 900MHz communication band.
  • Gold metallization ensures excellent reliability
  • 175°C Junction temperature

Product Information

Transistor Polarity:
NPN
Collector Emitter Voltage V(br)ceo:
9.5V
Transition Frequency ft:
900MHz
Power Dissipation Pd:
2W
DC Collector Current:
500mA
DC Current Gain hFE:
25hFE
RF Transistor Case:
SOT-223
No. of Pins:
3Pins
Operating Temperature Max:
175°C
Product Range:
-
Automotive Qualifications Standard:
-
MSL:
-
SVHC:
No SVHC (17-Dec-2015)

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Applications

  • RF Communications
  • Portable Devices

Legislation and Environmental

Product Traceability
RoHS Compliant:
Yes
Authorized Distributor

Substitutes

Associated Products