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NXP  BLT81,115  Bipolar - RF Transistor, UHF, NPN, 9.5 V, 900 MHz, 2 W, 500 mA, 25 hFE

NXP BLT81,115

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Product Overview

The BLT81,115 is a 9.5V NPN Silicon Planar Epitaxial UHF Power Transistor in SMD encapsulation. Suitable for use in hand held radio equipment in 900MHz communication band.
  • Gold metallization ensures excellent reliability
  • 175°C Junction temperature

Applications

RF Communications; Portable Devices

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Product Information

Transistor Polarity:
NPN
Collector Emitter Voltage V(br)ceo:
9.5V
Transition Frequency ft:
900MHz
Power Dissipation Pd:
2W
DC Collector Current:
500mA
DC Current Gain hFE:
25hFE
RF Transistor Case:
SOT-223
No. of Pins:
3Pins
Operating Temperature Max:
175°C
Product Range:
-
Power @ 1dB Gain Compression, P1dB:
6.5 dB
Continuous Collector Current Ic:
500 mA
MSL:
-
Forward Current Transfer Ratio:
-
SVHC:
No SVHC (17-Dec-2015)

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Legislation and Environmental

Moisture Sensitivity Level:
-
Product Traceability
RoHS Compliant:
Yes

Applications

  • RF Communications;
  • Portable Devices

Substitutes

Bipolar - RF Transistor, UHF, NPN, 9.5 V, 900 MHz, 2 W, 500 mA, 25 hFE

NXP

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Price for: Each (Supplied on Full Reel)

1000+ $0.812 2000+ $0.756 5000+ $0.728 10000+ $0.70 More pricing

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Bipolar - RF Power Transistor, 900 MHz, 900 MHz, 25 hFE, 250 mA

NXP

142: 

Price for: Each (Supplied on Cut Tape)

1+ $1.82 Promotional price 10+ $1.82 Promotional price 25+ $1.67 Promotional price 100+ $1.67 Promotional price More pricing

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