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NXP  BLT81,115  Bipolar - RF Transistor, UHF, NPN, 9.5 V, 900 MHz, 2 W, 500 mA, 25 hFE

NXP BLT81,115
Technical Data Sheet (81.92KB) EN See all Technical Docs

Image is for illustrative purposes only. Please refer to product description.

Product Overview

The BLT81,115 is a 9.5V NPN Silicon Planar Epitaxial UHF Power Transistor in SMD encapsulation. Suitable for use in hand held radio equipment in 900MHz communication band.
  • Gold metallization ensures excellent reliability
  • 175°C Junction temperature

 

Product Information

Transistor Polarity:
NPN
Collector Emitter Voltage V(br)ceo:
9.5V
Transition Frequency ft:
900MHz
Power Dissipation Pd:
2W
DC Collector Current:
500mA
DC Current Gain hFE:
25hFE
RF Transistor Case:
SOT-223
No. of Pins:
3Pins
Operating Temperature Max:
175°C
Product Range:
-
Automotive Qualifications Standard:
-
Power @ 1dB Gain Compression, P1dB:
6.5 dB
Continuous Collector Current Ic:
500 mA
MSL:
-
Forward Current Transfer Ratio:
-
SVHC:
No SVHC (17-Dec-2015)

Find similar products  grouped by common attribute

Applications

  • RF Communications;
  • Portable Devices

Legislation and Environmental

Moisture Sensitivity Level:
-
Product Traceability
RoHS Compliant:
Yes
Authorized Distributor

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