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NXP  BLT81,115  Bipolar - RF Transistor, UHF, NPN, 9.5 V, 900 MHz, 2 W, 500 mA, 25 hFE

NXP BLT81,115
Technical Data Sheet (81.92KB) EN See all Technical Docs

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Product Information

Transistor Polarity:
NPN
Collector Emitter Voltage V(br)ceo:
9.5V
Transition Frequency ft:
900MHz
Power Dissipation Pd:
2W
DC Collector Current:
500mA
DC Current Gain hFE:
25hFE
RF Transistor Case:
SOT-223
No. of Pins:
3Pins
Operating Temperature Max:
175°C
Product Range:
-
Power @ 1dB Gain Compression, P1dB:
6.5 dB
Continuous Collector Current Ic:
500 mA
MSL:
-
Forward Current Transfer Ratio:
-
SVHC:
No SVHC (17-Dec-2015)

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Legislation and Environmental

Moisture Sensitivity Level:
-
RoHS Compliant:
Yes

Substitutes

Bipolar - RF Power Transistor, 900 MHz, 900 MHz, 25 hFE, 250 mA

NXP

142: 

Price for: Each (Supplied on Cut Tape)

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