Low

NXP  BLT80,115  Bipolar - RF Power Transistor, 900 MHz, 900 MHz, 25 hFE, 250 mA

NXP BLT80,115
Manufacturer:
NXP NXP
Manufacturer Part No:
BLT80,115
Newark Part No.:
75R4685
Technical Datasheet:
See all Technical Docs

The actual product may differ from image shown

Product Overview

The BLT80,115 is a 10V NPN silicon planar epitaxial UHF Power Transistor for handheld radio equipment in the 900MHz communication band.
  • SMD encapsulation
  • Gold metallization ensures excellent reliability
  • 20V Collector to base voltage (VCBO)
  • 3V Emitter to base voltage (VEBO)
  • 85K/W Thermal resistance, junction to ambient

 

Product Information

Operating Frequency Min:
900MHz
Transition Frequency ft:
900MHz
DC Current Gain hFE:
25hFE
Continuous Collector Current Ic:
250mA
Collector Emitter Voltage V(br)ceo:
10V
Power Gain, Gp:
6dB
Power Dissipation Pd:
2W
Power @ 1dB Gain Compression, P1dB:
6dB
RF Transistor Case:
SOT-223
No. of Pins:
3 Pin
Noise Figure Typ:
-
MSL:
-
Forward Current Transfer Ratio:
-
Product Range:
-
SVHC:
No SVHC (17-Dec-2015)

Find similar products  grouped by common attribute

Applications

  • RF Communications;
  • Communications & Networking

Legislation and Environmental

Moisture Sensitivity Level:
-
Product Traceability
RoHS Compliant:
Yes
Authorized Distributor

Substitutes

Associated Products