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NXP  BLT80,115  Bipolar - RF Power Transistor, 900 MHz, 900 MHz, 25 hFE, 250 mA

NXP BLT80,115

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Product Overview

The BLT80,115 is a 10V NPN silicon planar epitaxial UHF Power Transistor for handheld radio equipment in the 900MHz communication band.
  • SMD encapsulation
  • Gold metallization ensures excellent reliability
  • 20V Collector to base voltage (VCBO)
  • 3V Emitter to base voltage (VEBO)
  • 85K/W Thermal resistance, junction to ambient

Applications

RF Communications; Communications & Networking

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Product Information

Operating Frequency Min:
900MHz
Transition Frequency ft:
900MHz
DC Current Gain hFE:
25hFE
Continuous Collector Current Ic:
250mA
Collector Emitter Voltage V(br)ceo:
10V
Power Gain, Gp:
6dB
Power Dissipation Pd:
2W
Power @ 1dB Gain Compression, P1dB:
6dB
RF Transistor Case:
SOT-223
No. of Pins:
3 Pin
Noise Figure Typ:
-
MSL:
-
Forward Current Transfer Ratio:
-
Product Range:
-
SVHC:
No SVHC (17-Dec-2015)

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Legislation and Environmental

Moisture Sensitivity Level:
-
Product Traceability
RoHS Compliant:
Yes

Applications

  • RF Communications;
  • Communications & Networking

Substitutes

Bipolar - RF Transistor, UHF, NPN, 9.5 V, 900 MHz, 2 W, 500 mA, 25 hFE

NXP

0

Price for: Each (Supplied on Full Reel)

1000+ $0.812 2000+ $0.756 5000+ $0.728 10000+ $0.70 More pricing

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