Low

NXP  BLT80,115  Bipolar - RF Power Transistor, 900 MHz, 900 MHz, 25 hFE, 250 mA

NXP BLT80,115
Technical Data Sheet (82.57KB) EN See all Technical Docs

Image is for illustrative purposes only. Please refer to product description.

Product Overview

The BLT80,115 is a 10V NPN silicon planar epitaxial UHF Power Transistor for handheld radio equipment in the 900MHz communication band.
  • SMD encapsulation
  • Gold metallization ensures excellent reliability
  • 20V Collector to base voltage (VCBO)
  • 3V Emitter to base voltage (VEBO)
  • 85K/W Thermal resistance, junction to ambient

 

Product Information

Operating Frequency Min:
900MHz
Transition Frequency ft:
900MHz
DC Current Gain hFE:
25hFE
Continuous Collector Current Ic:
250mA
Collector Emitter Voltage V(br)ceo:
10V
Power Gain, Gp:
6dB
Power Dissipation Pd:
2W
Power @ 1dB Gain Compression, P1dB:
6dB
RF Transistor Case:
SOT-223
No. of Pins:
3 Pin
Noise Figure Typ:
-
MSL:
-
Forward Current Transfer Ratio:
-
Product Range:
-
SVHC:
No SVHC (17-Dec-2015)

Find similar products  grouped by common attribute

Applications

  • RF Communications;
  • Communications & Networking

Legislation and Environmental

Moisture Sensitivity Level:
-
Product Traceability
RoHS Compliant:
Yes
Authorized Distributor

Substitutes

Associated Products