NXP  BLT80,115  Bipolar - RF Power Transistor, 900 MHz, 900 MHz, 25, 250 mA

NXP BLT80,115

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  • Manufacturer:
  • Newark Part No.: 70R2908
  • Manufacturer Part No BLT80,115

Product Information


  • Operating Frequency Min 900MHz
  • Transition Frequency ft 900MHz
  • DC Current Gain hFE 25
  • Continuous Collector Current Ic 250mA
  • Collector Emitter Voltage V(br)ceo 10V
  • Power Gain, Gp 6dB
  • Power Dissipation Pd 2W
  • Power @ 1dB Gain Compression, P1dB 6dB
  • RF Transistor Case SOT-223
  • No. of Pins 3 Pin
  • Noise Figure Typ -
  • MSL -
  • Forward Current Transfer Ratio -
  • SVHC To Be Advised

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  • Application Note (595.25KB) EN
  • Availability

    Availability: No Longer Manufactured


    Substitutes

    • 75R4685 - Bipolar - RF Power Transistor, 900 MHz, 900 MHz, 25, 250 mA
     
     
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    Substitutes


      Newark Part No. Manufacturer Part No Manufacturer / Description
    Avail Price Qty
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    Exact
    75R4685
    BLT80,115

    BLT80,115

    NXP

    Bipolar - RF Power Transistor, 900 MHz, 900 MHz, 25, 250 mA

    Availability:​ 142  

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