NXP  BLT80,115  Bipolar - RF Transistor, 900 MHz, 900 MHz, 25, 250 mA

NXP BLT80,115

Image is for illustrative purposes only. Please refer to product description.

  • Manufacturer:
  • Newark Part No.: 70R2908
  • Manufacturer Part No BLT80,115

Product Specifications, Documents & More


  • Collector Emitter Voltage V(br)ceo: 10V
  • Continuous Collector Current Ic: 250mA
  • DC Current Gain hFE: 25
  • Forward Current Transfer Ratio: -
  • MSL: -
  • No. of Pins: 3
  • Noise Figure Typ: -
  • Operating Frequency Min: 900MHz
  • Power @ 1dB Gain Compression, P1dB: 6dB
  • Power Dissipation Pd: 2W
  • Power Gain, Gp: 6dB
  • RF Transistor Case: SOT-223
  • SVHC: To Be Advised
  • Transition Frequency Typ ft: 900MHz

Find similar products  grouped by common attribute

Availability

Availability: No Longer Manufactured


Substitutes

  • 75R4685 - Bipolar - RF Transistor, 900 MHz, 900 MHz, 25, 250 mA

Price

Pricing is unavailable. Please contact customer services.

 
 
Low

Legislation and Environmental


Back to top

Customer Reviews


Customer Q&A Exchange


Community


Like to see information about this product from other customers?

 Read discussions, blogs, documents from our community members.

Filters:

Post a question to one of our experts or start a discussion and get responses from supplier experts and fellow engineers in our community.
Back to top

Substitutes


  Newark Part No. Manufacturer Part No Manufacturer / Description
Availability Price Qty
ascdsc ascdsc ascdsc ascdsc ascdsc
Exact
75R4685
BLT80,115

BLT80,115

NXP

Bipolar - RF Transistor, 900 MHz, 900 MHz, 25, 250 mA

142 

Price for: Cut Tape 1

1+ $1.82 Promotional price 10+ $1.82 Promotional price 25+ $1.67 Promotional price 100+ $1.67 Promotional price

Buy

Available until stock is exhausted


see cut-off times

Customers Also Bought