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NXP  BLT80,115  Bipolar - RF Power Transistor, 900 MHz, 900 MHz, 25 hFE, 250 mA

NXP BLT80,115
Technical Data Sheet (82.57KB) EN See all Technical Docs

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Product Information

Operating Frequency Min:
900MHz
Transition Frequency ft:
900MHz
DC Current Gain hFE:
25hFE
Continuous Collector Current Ic:
250mA
Collector Emitter Voltage V(br)ceo:
10V
Power Gain, Gp:
6dB
Power Dissipation Pd:
2W
Power @ 1dB Gain Compression, P1dB:
6dB
RF Transistor Case:
SOT-223
No. of Pins:
3 Pin
Noise Figure Typ:
-
MSL:
-
Forward Current Transfer Ratio:
-
Product Range:
-
SVHC:
To Be Advised

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Legislation and Environmental

Moisture Sensitivity Level:
-
RoHS Compliant:
Yes
Authorized Distributor

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Bipolar - RF Power Transistor, 900 MHz, 900 MHz, 25 hFE, 250 mA

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