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NXP  BFQ67W,115  Bipolar - RF Transistor, NPN, 10 V, 8 GHz, 300 mW, 50 mA, 60 hFE

NXP BFQ67W,115
Technical Data Sheet (250.41KB) EN See all Technical Docs

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Product Information

Transistor Polarity:
NPN
Collector Emitter Voltage V(br)ceo:
10V
Transition Frequency ft:
8GHz
Power Dissipation Pd:
300mW
DC Collector Current:
50mA
DC Current Gain hFE:
60hFE
RF Transistor Case:
SOT-323
No. of Pins:
3Pins
Operating Temperature Max:
175°C
Product Range:
-
Automotive Qualifications Standard:
-
MSL:
-
SVHC:
To Be Advised

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Legislation and Environmental

Moisture Sensitivity Level:
-
RoHS Compliant:
Yes
Authorized Distributor