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NXP  BFQ67W,115  Bipolar - RF Transistor, NPN, 10 V, 8 GHz, 300 mW, 50 mA, 60 hFE

NXP BFQ67W,115
Technical Data Sheet (250.41KB) EN See all Technical Docs

Image is for illustrative purposes only. Please refer to product description.

 

Product Information

Transistor Polarity:
NPN
Collector Emitter Voltage V(br)ceo:
10V
Transition Frequency ft:
8GHz
Power Dissipation Pd:
300mW
DC Collector Current:
50mA
DC Current Gain hFE:
60hFE
RF Transistor Case:
SOT-323
No. of Pins:
3Pins
Operating Temperature Max:
175°C
Product Range:
-
MSL:
-
SVHC:
No SVHC (17-Dec-2015)

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Legislation and Environmental

Moisture Sensitivity Level:
-
Product Traceability
RoHS Compliant:
Yes

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