Low

NXP  BFM505,115  Bipolar - RF Transistor, Wideband, Dual NPN, 8 V, 9 GHz, 500 mW, 18 mA, 120 hFE

NXP BFM505,115
Technical Data Sheet (308.12KB) EN See all Technical Docs

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Product Information

Transistor Polarity:
Dual NPN
Collector Emitter Voltage V(br)ceo:
8V
Transition Frequency ft:
9GHz
Power Dissipation Pd:
500mW
DC Collector Current:
18mA
DC Current Gain hFE:
120hFE
RF Transistor Case:
SOT-363
No. of Pins:
6Pins
Operating Temperature Max:
175°C
Product Range:
-
Automotive Qualifications Standard:
-
MSL:
-
SVHC:
No SVHC (17-Dec-2015)

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Legislation and Environmental

Moisture Sensitivity Level:
-
Product Traceability
RoHS Compliant:
Yes
Authorized Distributor