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NXP  BFM505,115  Bipolar - RF Transistor, Wideband, Dual NPN, 8 V, 9 GHz, 500 mW, 18 mA, 120 hFE

NXP BFM505,115
Technical Data Sheet (308.12KB) EN See all Technical Docs

Image is for illustrative purposes only. Please refer to product description.

 

Product Information

Transistor Polarity:
Dual NPN
Collector Emitter Voltage V(br)ceo:
8V
Transition Frequency ft:
9GHz
Power Dissipation Pd:
500mW
DC Collector Current:
18mA
DC Current Gain hFE:
120hFE
RF Transistor Case:
SOT-363
No. of Pins:
6Pins
Operating Temperature Max:
175°C
Product Range:
-
MSL:
-
SVHC:
No SVHC (17-Dec-2015)

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Legislation and Environmental

Moisture Sensitivity Level:
-
Product Traceability
RoHS Compliant:
Yes

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