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NXP  BFG591,115  Bipolar - RF Transistor, Wideband, NPN, 15 V, 7 GHz, 2 W, 200 mA, 90 hFE

NXP BFG591,115
Technical Data Sheet (314.30KB) EN See all Technical Docs

Image is for illustrative purposes only. Please refer to product description.

 

Product Information

Transistor Polarity:
NPN
Collector Emitter Voltage V(br)ceo:
15V
Transition Frequency ft:
7GHz
Power Dissipation Pd:
2W
DC Collector Current:
200mA
DC Current Gain hFE:
90hFE
RF Transistor Case:
SOT-223
No. of Pins:
3Pins
Operating Temperature Max:
150°C
Product Range:
-
MSL:
-
SVHC:
To Be Advised

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Legislation and Environmental

Moisture Sensitivity Level:
-
RoHS Compliant:
Yes

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