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NXP  BFG541,115  Bipolar - RF Transistor, Wideband, NPN, 15 V, 9 GHz, 650 mW, 120 mA, 120 hFE

NXP BFG541,115
Technical Data Sheet (298.53KB) EN See all Technical Docs

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Product Overview

The BFG541,115 is a NPN silicon epitaxial planar Wideband Transistor encapsulated in a plastic envelope. The device is intended for wideband applications in the GHz range, such as analogue and digital cellular telephones, cordless telephones (CT1, CT2, DECT), radar detectors, satellite TV tuners (SATV), MATV/CATV amplifiers and repeater amplifiers in fibre-optic systems.
  • High power gain
  • Low noise figure
  • High transition frequency
  • Gold metallization ensures excellent reliability

 

Product Information

Transistor Polarity:
NPN
Collector Emitter Voltage V(br)ceo:
15V
Transition Frequency ft:
9GHz
Power Dissipation Pd:
650mW
DC Collector Current:
120mA
DC Current Gain hFE:
120hFE
RF Transistor Case:
SOT-223
No. of Pins:
3Pins
Operating Temperature Max:
175°C
Product Range:
-
Automotive Qualifications Standard:
-
MSL:
-
SVHC:
To Be Advised

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Applications

  • Industrial;
  • RF Communications;
  • Communications & Networking;
  • Fibre Optics;
  • Power Management

Legislation and Environmental

Moisture Sensitivity Level:
-
RoHS Compliant:
Yes
Authorized Distributor