Low

BFG541,115 - 

Bipolar - RF Transistor, Wideband, NPN, 15 V, 9 GHz, 650 mW, 120 mA, 120 hFE

NXP BFG541,115

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Manufacturer:
NXP NXP
Manufacturer Part No:
BFG541,115
Newark Part No.:
75R4630
Technical Datasheet:
(EN)
See all Technical Docs

Product Overview

The BFG541,115 is a NPN silicon epitaxial planar Wideband Transistor encapsulated in a plastic envelope. The device is intended for wideband applications in the GHz range, such as analogue and digital cellular telephones, cordless telephones (CT1, CT2, DECT), radar detectors, satellite TV tuners (SATV), MATV/CATV amplifiers and repeater amplifiers in fibre-optic systems.
  • High power gain
  • Low noise figure
  • High transition frequency
  • Gold metallization ensures excellent reliability

Applications

Industrial, RF Communications, Communications & Networking, Fibre Optics, Power Management

Product Information

:
NPN
:
15V
:
9GHz
:
650mW
:
120mA
:
120hFE
:
SOT-223
:
3Pins
:
175°C
:
-
:
-
:
-
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No Longer Manufactured

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