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NXP  BFG541,115  Bipolar - RF Transistor, Wideband, NPN, 15 V, 9 GHz, 650 mW, 120 mA, 120 hFE

NXP BFG541,115
Technical Data Sheet (298.53KB) EN See all Technical Docs

Image is for illustrative purposes only. Please refer to product description.

 

Product Information

Transistor Polarity:
NPN
Collector Emitter Voltage V(br)ceo:
15V
Transition Frequency ft:
9GHz
Power Dissipation Pd:
650mW
DC Collector Current:
120mA
DC Current Gain hFE:
120hFE
RF Transistor Case:
SOT-223
No. of Pins:
3Pins
Operating Temperature Max:
175°C
Product Range:
-
MSL:
-
SVHC:
No SVHC (17-Dec-2015)

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Legislation and Environmental

Moisture Sensitivity Level:
-
Product Traceability
RoHS Compliant:
Yes

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