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NXP  BFG541,115  Bipolar - RF Transistor, Wideband, NPN, 15 V, 9 GHz, 650 mW, 120 mA, 120 hFE

NXP BFG541,115

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Product Information

Transistor Polarity:
NPN
Collector Emitter Voltage V(br)ceo:
15V
Transition Frequency ft:
9GHz
Power Dissipation Pd:
650mW
DC Collector Current:
120mA
DC Current Gain hFE:
120hFE
RF Transistor Case:
SOT-223
No. of Pins:
3Pins
Operating Temperature Max:
175°C
Product Range:
-
MSL:
-
SVHC:
No SVHC (17-Dec-2015)

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Legislation and Environmental

Moisture Sensitivity Level:
-
Product Traceability
RoHS Compliant:
Yes

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