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NXP  BFG541,115  Bipolar - RF Transistor, Wideband, NPN, 15 V, 9 GHz, 650 mW, 120 mA, 120 hFE

NXP BFG541,115
Manufacturer:
NXP NXP
Manufacturer Part No:
BFG541,115
Newark Part No.:
75R4630
Technical Datasheet:
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Product Overview

The BFG541,115 is a NPN silicon epitaxial planar Wideband Transistor encapsulated in a plastic envelope. The device is intended for wideband applications in the GHz range, such as analogue and digital cellular telephones, cordless telephones (CT1, CT2, DEC...
  • High power gain
  • Low noise figure
  • High transition frequency
  • Gold metallization ensures excellent reliability

 

Product Information

Transistor Polarity:
NPN
Collector Emitter Voltage V(br)ceo:
15V
Transition Frequency ft:
9GHz
Power Dissipation Pd:
650mW
DC Collector Current:
120mA
DC Current Gain hFE:
120hFE
RF Transistor Case:
SOT-223
No. of Pins:
3Pins
Operating Temperature Max:
175°C
Product Range:
-
Automotive Qualifications Standard:
-
MSL:
-
SVHC:
To Be Advised

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Applications

  • Industrial;
  • RF Communications;
  • Communications & Networking;
  • Fibre Optics;
  • Power Management

Legislation and Environmental

Moisture Sensitivity Level:
-
RoHS Compliant:
Yes
Authorized Distributor