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NXP  BFG520W/X,115  Bipolar - RF Transistor, Wideband, NPN, 15 V, 9 GHz, 500 mW, 70 mA, 120 hFE

NXP BFG520W/X,115
Technical Data Sheet (305.03KB) EN See all Technical Docs

Image is for illustrative purposes only. Please refer to product description.

 

Product Information

Transistor Polarity:
NPN
Collector Emitter Voltage V(br)ceo:
15V
Transition Frequency ft:
9GHz
Power Dissipation Pd:
500mW
DC Collector Current:
70mA
DC Current Gain hFE:
120hFE
RF Transistor Case:
SOT-343N
No. of Pins:
4Pins
Operating Temperature Max:
175°C
Product Range:
-
MSL:
-
SVHC:
No SVHC (15-Jun-2015)

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Legislation and Environmental

Moisture Sensitivity Level:
-
RoHS Compliant:
Yes

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