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NXP  BFG35,115  Bipolar - RF Transistor, Wideband, NPN, 18 V, 4 GHz, 1 W, 150 mA, 70 hFE

NXP BFG35,115
Technical Data Sheet (283.69KB) EN See all Technical Docs

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Product Information

Transistor Polarity:
NPN
Collector Emitter Voltage V(br)ceo:
18V
Transition Frequency ft:
4GHz
Power Dissipation Pd:
1W
DC Collector Current:
150mA
DC Current Gain hFE:
70hFE
RF Transistor Case:
SOT-223
No. of Pins:
3Pins
Operating Temperature Max:
175°C
Product Range:
-
Automotive Qualifications Standard:
-
MSL:
-
SVHC:
No SVHC (17-Dec-2015)

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Legislation and Environmental

Moisture Sensitivity Level:
-
RoHS Compliant:
Yes
Authorized Distributor

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Bipolar - RF Transistor, NPN, 18 V, 4 GHz, 1 W, 150 mA, 70

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