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NXP  BFG198,115  Bipolar - RF Transistor, Wideband, NPN, 10 V, 8 GHz, 1 W, 100 mA, 90 hFE

NXP BFG198,115

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Product Information

Transistor Polarity:
NPN
Collector Emitter Voltage V(br)ceo:
10V
Transition Frequency ft:
8GHz
Power Dissipation Pd:
1W
DC Collector Current:
100mA
DC Current Gain hFE:
90hFE
RF Transistor Case:
SOT-223
No. of Pins:
4Pins
Operating Temperature Max:
175°C
Product Range:
-
MSL:
-
SVHC:
No SVHC (15-Jun-2015)

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Legislation and Environmental

Moisture Sensitivity Level:
-
RoHS Compliant:
Yes

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