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NXP  BFG198,115  Bipolar - RF Transistor, Wideband, NPN, 10 V, 8 GHz, 1 W, 100 mA, 90 hFE

NXP BFG198,115
Manufacturer:
NXP NXP
Manufacturer Part No:
BFG198,115
Newark Part No.:
79R1822
Technical Datasheet:
See all Technical Docs

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Product Overview

The BFG198,115 is a NPN epitaxial planar Wideband Transistor in a plastic envelope, intended for wideband amplifier applications. The device offers a high gain and excellent output voltage capabilities.

 

Product Information

Transistor Polarity:
NPN
Collector Emitter Voltage V(br)ceo:
10V
Transition Frequency ft:
8GHz
Power Dissipation Pd:
1W
DC Collector Current:
100mA
DC Current Gain hFE:
90hFE
RF Transistor Case:
SOT-223
No. of Pins:
4Pins
Operating Temperature Max:
175°C
Product Range:
-
Automotive Qualifications Standard:
-
MSL:
-
SVHC:
To Be Advised

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Applications

  • Industrial;
  • Power Management

Legislation and Environmental

RoHS Compliant:
Yes
Authorized Distributor