NXP BFG198,115 Bipolar - RF Transistor, Wideband, NPN, 10 V, 8 GHz, 1 W, 100 mA, 90
Image is for illustrative purposes only. Please refer to product description.
- Manufacturer: NXP
- Newark Part No.: 79R1822
- Manufacturer Part No BFG198,115
- Transistor Polarity NPN
- Collector Emitter Voltage V(br)ceo 10V
- Transition Frequency ft 8GHz
- Power Dissipation Pd 1W
- DC Collector Current 100mA
- DC Current Gain hFE 90
- RF Transistor Case SOT-223
- No. of Pins 4Pins
- Operating Temperature Max 175°C
- MSL -
- SVHC No SVHC (15-Jun-2015)
Find similar products grouped by common attribute
Availability: No Longer Manufactured
Legislation and Environmental
- Moisture Sensitivity Level: -
RoHS Certificate of Compliance
Find products functionally similar to this one. Select one of the following links, and you will be taken to a product group page that presents all products in this category that share the given attribute.
Like to see information about this product from other customers?