NXP BFG198,115 Bipolar - RF Transistor, Wideband, NPN, 10 V, 8 GHz, 1 W, 100 mA, 90
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- Manufacturer: NXP
- Newark Part No.: 79R1822
- Manufacturer Part No BFG198,115
Product Specifications, Documents & More
- Collector Emitter Voltage V(br)ceo: 10V
- DC Collector Current: 100mA
- DC Current Gain hFE: 90
- MSL: -
- No. of Pins: 4
- Operating Temperature Max: 175°C
- Power Dissipation Pd: 1W
- RF Transistor Case: SOT-223
- SVHC: No SVHC (15-Jun-2015)
- Transistor Polarity: NPN
- Transition Frequency Typ ft: 8GHz
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Availability: No Longer Manufactured
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Legislation and Environmental
- Moisture Sensitivity Level: -
RoHS Certificate of Compliance
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