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NXP  BF862,215  JFET Transistor, Junction Field Effect, -20 V, 10 mA, 25 mA, -1.2 V, SOT-23, JFET

NXP BF862,215

Image is for illustrative purposes only. Please refer to product description.

Product Overview

The BF862,215 is a N-channel symmetrical silicon junction FET Transistor. Drain and source are interchangeable.
  • High Transfer Admittance
  • High Transition Frequency for Excellent Sensitivity in AM Car Radios

Applications

Audio; Signal Processing

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Product Information

Breakdown Voltage Vbr:
-20V
Zero Gate Voltage Drain Current Idss Min:
10mA
Zero Gate Voltage Drain Current Idss Max:
25mA
Gate-Source Cutoff Voltage Vgs(off) Max:
-1.2V
Transistor Case Style:
SOT-23
Transistor Type:
JFET
No. of Pins:
3 Pin
Operating Temperature Max:
150°C
Product Range:
-
Power Dissipation Pd:
300 mW
MSL:
-
Drain Source Voltage Vds:
20 V
Continuous Drain Current Id:
25 mA
SVHC:
No SVHC (17-Dec-2015)

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Legislation and Environmental

Moisture Sensitivity Level:
-
Product Traceability
RoHS Compliant:
Yes

Applications

  • Audio;
  • Signal Processing

Substitutes

JFET Transistor, Junction Field Effect, -20 V, 10 mA, 25 mA, -1.2 V, SOT-23, JFET

NXP

3,000: 

Price for: Each (Supplied on Full Reel)

3000+ $0.185 Promotional price 6000+ $0.172 Promotional price

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BF862,235

BF862/TO-236AB/REEL 11" Q3/T4*

NXP

0

Price for: Each (Supplied on Full Reel)

10000+ $0.186 20000+ $0.174 50000+ $0.162 100000+ $0.15 More pricing

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