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NXP  BF862,215  JFET Transistor, Junction Field Effect, -20 V, 10 mA, 25 mA, -1.2 V, SOT-23, JFET

NXP BF862,215
Technical Data Sheet (233.10KB) EN See all Technical Docs

Image is for illustrative purposes only. Please refer to product description.

Product Overview

The BF862,215 is a N-channel symmetrical silicon junction FET Transistor. Drain and source are interchangeable.
  • High Transfer Admittance
  • High Transition Frequency for Excellent Sensitivity in AM Car Radios

 

Product Information

Breakdown Voltage Vbr:
-20V
Zero Gate Voltage Drain Current Idss Min:
10mA
Zero Gate Voltage Drain Current Idss Max:
25mA
Gate-Source Cutoff Voltage Vgs(off) Max:
-1.2V
Transistor Case Style:
SOT-23
Transistor Type:
JFET
No. of Pins:
3 Pin
Operating Temperature Max:
150°C
Power Dissipation Pd:
300 mW
MSL:
-
Drain Source Voltage Vds:
20 V
Continuous Drain Current Id:
25 mA
Product Range:
-
SVHC:
No SVHC (17-Dec-2015)

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Applications

  • Audio;
  • Signal Processing

Legislation and Environmental

Moisture Sensitivity Level:
-
Product Traceability
RoHS Compliant:
Yes

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